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Volumn 298, Issue SPEC. ISS, 2007, Pages 223-227

Polarities of GaN films and 3C-SiC intermediate layers grown on (1 1 1) Si substrates by MOVPE

Author keywords

A1. Crystal structure; A3. Metalorganic vapor phase epitaxy; B1. Nitrides

Indexed keywords

CRYSTAL STRUCTURE; ELECTRON DIFFRACTION; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; SILICON CARBIDE; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

EID: 33846447458     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.022     Document Type: Article
Times cited : (17)

References (24)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.