Ion beam synthesis of 3C-SiC layers in Si and its application in buffer layer for GaN epitaxial growth

Applied Surface Science

Volumn 238, Issue 1-4 SPEC. ISS., 2004, Pages 159-164

  Ito, Y ^a   Yamauchi, T ^b   Yamamoto, A ^b   Sasase, M ^a   Nishio, S ^a   Yasuda, K ^a   Ishigami, Y ^a  

^a WAKASA WAN ENERGY RESEARCH CENTER   (Japan)

^b UNIVERSITY OF FUKUI   (Japan)

Author keywords

Annealing; Crystalline 3C SiC; GaN SiC Si structure; High dose carbon implantation; MOVPE growth GaN; Substrate temperature

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; ETCHING; GALLIUM NITRIDE; ION BEAMS; ION IMPLANTATION; METALLORGANIC VAPOR PHASE EPITAXY; SILICON; SYNTHESIS (CHEMICAL);

CRYSTALLINE 3C-SIC; GAN/SIC/SI STRUCTURE; HIGH-DOSE CARBON IMPLANTATION; MOVPE GROWTH GAN; SUBSTRATE TEMPERATURE;

CARBON INORGANIC COMPOUNDS;

EID: 4644258929     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.05.199     Document Type: Conference Paper

References (8)

1. Borders J.A., Picraux S.T., Beezhold W. Appl. Phys. Lett. 18:1971;509.
2. Lindner K.N. Nucl. Instrum. Meth. B. 178:2001;44.
3. Chen D., Cheung W.Y., Wong S.P. Nucl. Instrum. Meth. B. 148:1999;589.
4. Y. Ito, R. Ishigami, K. Yasuda, S. Hatori, A. Yamamoto, in: Proceedings of the 2000 International Conference on Ion Implantation Technology, Alpbach, Austria, 2000, p. 793.
5. Spitzer W.G., Kleinman D., Walsh D. Phys. Rev. 113:1959;127.
6. Spitzer W.G., Kleinman D., Frosch C.J. Phys. Rev. 113:1959;133.
7. von Munch W., Wiebach S. Diam. Relat. Mater. 3:1994;500.
8. Yamamoto A., Yamauchi T., Tanikawa T., Sasase M., Ghosh B.K., Hashimoto A., Ito Y. J. Cryst. Growth. 261:2004;266.