Growth of single-domain GaN layers on Si(0 0 1) by metalorganic vapor-phase epitaxy

Journal of Crystal Growth

Volumn 289, Issue 2, 2006, Pages 485-488

  Schulze, F ^a   Dadgar, A ^a   Blasing J ^a   Hempel, T ^a   Diez, A ^a   Christen, J ^a   Krost, A ^a  

^a OTTO VON GUERICKE UNIVERSITY   (Germany)

Author keywords

A1. Characterization; A1. Crystal structure; A1. Substrates; A1. X ray diffraction; A3. Metalorganic vapour phase epitaxy; B1. Nitrides

Indexed keywords

CHARACTERIZATION; CRYSTAL GROWTH; CRYSTAL STRUCTURE; FILM GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; SCANNING ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

CRYSTALLITES; SINGLE-DOMAIN GAN LAYERS;

GALLIUM NITRIDE;

EID: 33644850069     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.12.073     Document Type: Article

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