Cubic group-III nitride-based nanostructures-basics and applications in optoelectronics

Microelectronics Journal

Volumn 40, Issue 2, 2009, Pages 204-209

  As, D J ^a  

^a UNIVERSITY OF PADERBORN   (Germany)

Author keywords

Cubic group III nitrides; Cubic HFETs; Intersubband absorption; MBE

Indexed keywords

ABSORPTION; CRYSTAL GROWTH; ELECTRIC PROPERTIES; ELECTRON BEAMS; GALLIUM ALLOYS; GALLIUM NITRIDE; METALLIC COMPOUNDS; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NITRIDES; OPTOELECTRONIC DEVICES; PHASE INTERFACES; POLARIZATION; QUANTUM ELECTRONICS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WIRES; STOICHIOMETRY; SURFACE ROUGHNESS;

ACTIVE REGION (AR); ALGAN GAN; CONTROL TECHNIQUES; CUBIC GROUP-III NITRIDES; CUBIC HFETS; ELECTRICAL (ELECTRONIC) PROPERTIES; FIELD EFFECTS; INTERSUBBAND ABSORPTION; MBE; MOLECULAR BEAM EPITAXY (MBE); POLARIZATION EFFECTS; POLARIZATION FIELD (PE); QUANTUM DOT (CO); QUANTUM WELLS;

FIELD EFFECT TRANSISTORS;

EID: 58749115051     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2008.07.036     Document Type: Article

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