Ion-beam-assisted molecular-beam epitaxy: A method to deposit gallium nitride films with high crystalline quality

Thin Solid Films

Volumn 458, Issue 1-2, 2004, Pages 63-66

  Sienz, S ^a   Gerlach, J W ^a   Hoche T ^a   Sidorenko, A ^a   Rauschenbach, B ^a  

^a LEIBNIZ INSTITUTE OF SURFACE ENGINEERING IOM   (Germany)

Author keywords

Gallium nitrides; Ion bombardment; Molecular beam epitaxy

Indexed keywords

FILM GROWTH; ION BEAM ASSISTED DEPOSITION; ION BOMBARDMENT; MOLECULAR BEAM EPITAXY; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

COLUMNAR GROWTH; ELECTRICAL QUALITY; ION ENERGY; ROCKING CURVES;

GALLIUM NITRIDE;

EID: 2542483927     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.11.272     Document Type: Article

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