Initial growth of cubic GaN on Si(0 0 1) coated with a thin flat SiC buffer layer

Journal of Crystal Growth

Volumn 220, Issue 3, 2000, Pages 204-208

  Wang, D ^a   Hiroyama, Y ^a   Tamura, M ^a   Ichikawa, M ^a   Yoshida, S ^b  

^a JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

^b FURUKAWA ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; CRYSTAL MICROSTRUCTURE; ENERGY GAP; FILM GROWTH; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; SILICON CARBIDE; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY;

EPILAYERS GROWTH; YELLOW-BAND LUMINESCENCE;

SEMICONDUCTING FILMS;

EID: 0034515110     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00839-3     Document Type: Article

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