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Thin Solid Films

Volumn 401, Issue 1-2, 2001, Pages 60-66

Metal-organic chemical vapor deposition growth of GaN thin film on 3C-SiC/Si(111) substrate using various buffer layers

(6) Park, C I a Kang, J H a Kim, K C a Nahm, K S a,b Suh, E K a Lim, K Y a

a Chonbuk National University (South Korea)

b PURDUE UNIVERSITY (United States)

Author keywords

Chemical vapor deposition; Gallium nitride; Photoluminescence; Silicon carbide

Indexed keywords

FILM GROWTH; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTOR SUPERLATTICES; SILICON CARBIDE; SUBSTRATES;

BAND-EDGE EMISSIONS;

THIN FILMS;

EID: 0035904929 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(01)01354-2 Document Type: Article

Times cited : (14)

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