Control of the crystalline quality of wurtzitic GaN films deposited on γ-LiAlO2 by ion-beam assisted molecular-beam epitaxy

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 257, Issue 1-2 SPEC. ISS., 2007, Pages 315-319

  Gerlach, J W ^a   Hofmann, A ^a   Hoche T ^a   Rauschenbach, B ^a  

^a LEIBNIZ INSTITUTE OF SURFACE ENGINEERING IOM   (Germany)

Author keywords

Gallium nitride; Ion beam assisted MBE; Lithium aluminate; m Plane orientation

Indexed keywords

FILM GROWTH; GALLIUM NITRIDE; ION BEAM ASSISTED DEPOSITION; LITHIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

ATOM FLUX RATIO; LITHIUM ALUMINATE; M-PLANE ORIENTATION;

SEMICONDUCTING FILMS;

EID: 33947620462     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2007.01.025     Document Type: Article

References (20)

1. Ke X., Jun X., Peizhen D., Yongzong Z., Guoqing Z., Rongsheng Q., and Zujie F. J. Cryst. Growth 193 (1998) 127
2. Waltereit P., Brandt O., and Ploog K.H. Appl. Phys. Lett. 75 (1999) 2029
3. Maruska H.P., Hill D.W., Chou M.C., Gallagher J.J., and Chai B.H. Opto-Electron. Rev. 11 (2003) 7
4. Haskell B.A., Baker T.J., McLaurin M.B., Wu F., Fini P.T., DenBaars S.P., Speck J.S., and Nakamura S. Appl. Phys. Lett. 86 (2005) 111917
5. Dikme Y., van Gemmern P., Chai B., Hill D., Szymakowski A., Kalisch H., Heuken M., and Jansen R.H. Phys. Status Solidi C 2 (2005) 2161
6. Wang L., Zeimer U., Richter E., Hennig Ch., Herms M., and Weyers M. Phys. Status Solidi A 203 (2006) 1663
7. Gerlach J.W., Hofmann A., Höche T., Frost F., and Rauschenbach B. Appl. Phys. Lett. 88 (2006) 011902
8. Gerlach J.W., Schwertberger R., Schrupp D., Sienz S., Attenberger W., and Rauschenbach B. IPAP Conf. Ser. 1 (2000) 202
9. Sienz S., Gerlach J.W., Höche T., Sidorenko A., Mayerhöfer T., Benndorf G., and Rauschenbach B. J. Cryst. Growth 264 (2004) 184
10. Anders A., and Anders S. Plasma Sources Sci. Technol. 4 (1995) 571
11. Höche T., Gerlach J.W., and Petsch T. Ultramicroscopy 106 (2006) 981
12. Eiper E., Hofmann A., Gerlach J.W., Rauschenbach B., and Keckes J. J. Cryst. Growth 284 (2005) 561
13. Waltereit P., Brandt O., Ramsteiner M., Trampert A., Grahn H.T., Menniger J., Reiche M., Uecker R., Reiche P., and Ploog K.H. Phys. Status Solidi A 180 (2000) 133
14. Sun Y.J., Brandt O., and Ploog K.H. J. Vac. Sci Technol. B 21 (2003) 1350
15. Liliental-Weber Z., Jasinski J., and Zakharov D.N. Opto-Electron. Rev. 12 (2004) 339
16. Liu T.Y., Trampert A., Sun Y.J., Brandt O., and Ploog K.H. Phil. Mag. Lett. 84 (2004) 435
17. Hellman E.S., Liliental-Weber Z., and Buchanan D.N.E. MRS Internet J. Nitride Semicond. 2 (1997) Article 30
18. Reed M.D., Kryliouk O.M., Mastro M.A., and Anderson T.J. J. Cryst. Growth 274 (2005) 14
19. Gerlach J.W., Sienz S., Attenberger W., and Rauschenbach B. Phys. Status Solidi C (2002) 161
20. Brandt O., Sun Y.J., Däweritz L., and Ploog K.H. Phys. Rev. B 69 (2004) 165326