In situ growth regime characterization of cubic GaN using reflection high energy electron diffraction

Applied Physics Letters

Volumn 90, Issue 4, 2007, Pages

  Schormann J ^a   Potthast, S ^a   As, D J ^a   Lischka, K ^a  

^a UNIVERSITY OF PADERBORN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAMS; HIGH ENERGY ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SURFACE ROUGHNESS;

IN SITU REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; OPTIMUM GROWTH CONDITIONS;

GALLIUM NITRIDE;

EID: 33846598058     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2432293     Document Type: Article

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