Electrical characteristic fluctuations in sub-45nm CMOS devices

Proceedings of the Custom Integrated Circuits Conference

Volumn , Issue , 2006, Pages 691-694

  Yang, Fu Liang ^a   Hwang, Jiunn Ren ^a   Li, Yiming ^b  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

PARAMETER ESTIMATION; RANDOM PROCESSES; THRESHOLD VOLTAGE; TRANSISTORS;

GATE DIELECTRIC THICKNESS; TRANSISTOR STRUCTURES;

CMOS INTEGRATED CIRCUITS;

EID: 34548282704     PISSN: 08865930     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CICC.2006.320881     Document Type: Conference Paper

References (16)

1. H.-Y. Chen, et al., Digest of Technical Papers Symposium on VLSI Technology, pp. 16-17, 2005.
2. F.-L. Yang, et al., Digest of Technical Papers of Symposium on VLSI Technology, pp. 196-197, 2004.
3. F.-L. Yang, et al., Digest of International Electron Devices Meeting, pp. 255-258, 2002..
4. F.-L. Yang, et al, Digest of Technical Papers of Symposium on VLSI Technology, pp. 104-105, 2002.
5. T.-C. Chen, IEEE International Solid-State Circuits Conference, pp. 22-28, 2006.
6. M. Yamaoka, et al., Digest of Technical Papers of Symposium on VLSI Circuits, pp. 288-291, 2004.
7. D. J. Frank, et al., Digest of Technical Papers Symposium on VLSI Technology, J-4, 1999.
8. A. Asenov, IEEE Transactions on Electron Devices, pp. 2505-2513, 1998.
9. T. Tanaka, et al., Digest of Technical Papers Symposium on VLSI Technology, pp. 271-272, 2000.
10. H. Majima, et al, IEEE Electron Device Letter, pp. 396-398, 2000.
11. S. Xiong, et al, IEEE Transactions on Electron Devices pp. 2255-2261, 2003.
12. Y. Li, et al, Proceedings of the 5th IEEE Conference on Nanotechnology, pp. 527-530, 2005.
13. Y. Li, et al., Extended Abstract of the 2005 International Conference on Solid State Devices and Materials, pp. 594-595, 2005.
14. Y. Li, et al., Extended Abstract of the 2005 International Conference on Solid State Devices and Materia Is, pp. 622-623, 2005.
15. A. Asenov, et al., IEEE Transactions on Electron Devices, pp. 1837-1860, 2003.
16. http://www.itrs.net/Common/2005ITRS/Home2005.htm.