Impact of random dopant fluctuation on bulk CMOS 6-T SRAM scaling

ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference

Volumn , Issue , 2006, Pages 258-261

  Cheng, B ^a   Roy, S ^a   Roy, G ^a   Brown, A ^a   Asenov, A ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; MOSFET DEVICES; SCALABILITY;

BIAS CONTROL; DOPANT FLUCTUATION; GATE LENGTH; PARAMETER FLUCTUATION;

STATIC RANDOM ACCESS STORAGE;

EID: 84943197898     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDER.2006.307687     Document Type: Conference Paper

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