Metal gate technology for nanoscale transistors - Material selection and process integration issues

Thin Solid Films

Volumn 462-463, Issue SPEC. ISS., 2004, Pages 34-41

  Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

High k dielectric materials; Metal gate; Transistor; Work function

Indexed keywords

GATE RESISTANCE; HIGH-K DIELECTRIC MATERIALS; METAL GATE; WORK FUNCTION;

CAPACITANCE; CMOS INTEGRATED CIRCUITS; DIELECTRIC MATERIALS; DOPING (ADDITIVES); INTERFACES (MATERIALS); MOSFET DEVICES; POLYSILICON; PROBLEM SOLVING; THIN FILMS; VACUUM APPLICATIONS;

MATERIALS SCIENCE;

EID: 4344623534     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.05.039     Document Type: Article

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