Molybdenum metal gate MOS technology for post-SiO2 gate dielectrics

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2000, Pages 641-644

  Lu, Q ^a   Lin, R ^a   Ranade, P ^a   Yeo, Y C ^a   Meng, X ^a   Takeuchi, H ^a   King, T J ^a   Hu, C ^a   Luan, H ^a   Lee, S ^a   Bai, W ^a   Lee, C H ^a   Kwong, D L ^a   Guo, X ^a   Wang, X ^a   Ma, T P ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; DIELECTRIC MATERIALS; MOLYBDENUM; SEMICONDUCTOR DEVICE MANUFACTURE; SILICA; THERMODYNAMIC STABILITY; ZIRCONIUM COMPOUNDS;

WORK FUNCTIONS;

MOSFET DEVICES;

EID: 0034453382     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

1. Fabrication and characterization of sub-quarter-micron MOSFETs with a copper gate electrode
2. High performance metal gate MOSFETs fabricated by CMP for 0.1 um regime
3. 2 interface
4. Molybdenum as a gate electrode for deep sub-micron CMOS technology
5. Dual-metal gate technology for deep-submicron CMOS transistors
6. Comparison of 14A Tox eq. JVD and RTCVD silicon nitride gate dielectrics for sub-100nm MOSFETs
7. Quantum effect in oxide thickness determination from capacitance measurement
8. Predicting CMOS speed with gate oxide and voltage scaling and interconnect loading effects
9. Scattering of silicon inversion layer electrons by metaloxide interface roughness
10. Modeling gate and substrate currents due to conduction and valence band electron and hole tunneling