Dual-metal gate CMOS technology with ultrathin silicon nitride gate dielectric

IEEE Electron Device Letters

Volumn 22, Issue 5, 2001, Pages 227-229

  Yeo, Yee Chia ^b   Lu, Qiang ^b   Ranade, Pushkar ^c   Takeuchi, Hideki ^b   Yang, Kevin J ^b   Polishchuk, Igor ^a,b   King, Tsu Jae ^a,b   Hu, Chenming ^a,b   Song, S C ^d   Luan, H F ^d   Kwong, Dim Lee ^a,d  

^a IEEE

^b UNIVERSITY OF CALIFORNIA   (United States)

^c Lawrence Berkeley National Laboratory   (United States)

^d The University of Texas at Austin   (United States)

Author keywords

CMOSFETs; Dielectric materials; Dual metal gate; Molybdenum; Titanium; Titanium compounds

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; GATES (TRANSISTOR); MOLYBDENUM COMPOUNDS; MOSFET DEVICES; SILICA; SILICON NITRIDE; TITANIUM COMPOUNDS;

DUAL-METAL GATES; RAPID-THERMAL CHEMICAL VAPOR DEPOSITION (RTCVD);

CMOS INTEGRATED CIRCUITS;

EID: 0035337187     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.919237     Document Type: Article

References (11)