Fully silicided NiSi gate on La2O3 MOSFETs

IEEE Electron Device Letters

Volumn 24, Issue 5, 2003, Pages 348-350

  Lin, C Y ^a   Ma, M W ^a   Chin, Albert ^a   Yeo, Y C ^b   Zhu, Chunxiang ^b   Li, M F ^b   Kwong, Dim Lee ^c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c The University of Texas at Austin   (United States)

Author keywords

CoSi2; La2O3; MOSFET; NiSi

Indexed keywords

ANNEALING; COBALT ALLOYS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC VARIABLES MEASUREMENT; ELECTRON MOBILITY; HIGH TEMPERATURE EFFECTS; HOLE MOBILITY; LANTHANUM COMPOUNDS; LEAKAGE CURRENTS; SILICON ALLOYS; SILICON WAFERS; THRESHOLD VOLTAGE;

CAPACITANCE-VOLTAGE CHARACTERISTICS; GATE DIELECTRICS; SILICIDATION;

MOSFET DEVICES;

EID: 0041672411     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.812569     Document Type: Article

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