Polysilicon gate with depletion - or - metallic gate with buried channel: what evil worse?

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 661-664

  Josse, E ^a   Skotnicki, T ^a  

^a ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; METALS; MOSFET DEVICES; OXIDES; PERFORMANCE; POLYSILANES; SEMICONDUCTOR DOPING;

ACTIVE GATE DOPING; METALLIC GATE; POLYDEPLETION; POLYSILICON GATE; SHORT CHANNEL EFFECTS;

GATES (TRANSISTOR);

EID: 0033331605     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)