Effect of the composition on the electrical properties of TaSixNy metal gate electrodes

IEEE Electron Device Letters

Volumn 24, Issue 7, 2003, Pages 439-441

  Suh, You Seok ^a   Heuss, Greg P ^a   Lee, Jae Hoon ^a   Misra, Veena ^a  

^a North Carolina State University   (United States)

Author keywords

Dual metal gates; Gate electrodes; Low work function; MOS capacitors; N diffusion; TaSiN

Indexed keywords

ANNEALING; ELECTRIC PROPERTIES; ELECTRODES; INTERFACES (MATERIALS); MOS CAPACITORS; SILICA; SPUTTERING; TANTALUM COMPOUNDS; THERMODYNAMIC STABILITY; THIN FILMS;

ELECTRODE-DIELECTRIC INTERFACE; METAL GATE ELECTRODE; REACTIVE COSPUTTERING; TANTALUM SILICON NITRIDE;

GATES (TRANSISTOR);

EID: 0041886721     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.814009     Document Type: Letter

References (11)

1. M. A. Nicolet, "Ternary amorphous metallic thin films as diffusion barriers for Cu metallization," Appl. Surf. Sci., vol. 91, p. 269, 1995.
2. Y. J. Lee, B. S. Suh, M. S. Kwon, and C. O. Park, "Barrier properties and failure mechanism of Ta-Si-N thin films for Cu interconnection," J. Appl. Phys., vol. 85, p. 1927, 1999.
3. D. J. Kim, Y. T. Kim, and J. W. Park, "Nanostructured Ta-Si-N diffusion barriers for Cu metallization," J. Appl. Phys., vol. 82, p. 4847, 1997.
4. T. Hara, T. Kitamura, M. Tanaka, T. Kobayashi, K. Sakiyama, S. Onishi, K. Ishihara, and J. Kudo, "Barrier effect of TaSiN layer for oxygen diffusion," J. Electrochem. Soc., vol. 143, p. 264, 1996.
5. A. Grill, C. Jahnes, and C. Cabral, "Layered TaSiN as an oxidation resistant electrically conductive barrier," J. Mater. Res., vol. 14, p. 1604, 1999.
6. T. Hara, M. Tanaka, K. Sakiyama, S. Onishi, K. Ishihara, and J. Kudo, "Barrier properties for oxygen diffusion in a TaSiN layer," Jpn. J. Appl. Phys., vol. 36, p. 893, 1997.
7. 2/Si structures by Fowler-Nordheim current analysis," Appl. Phys. Lett., vol. 25, p. 1403, 2002.
8. S. P. Murarka, Metallization theory and practice for VLSI and ULSI, 1993.
9. D. G. Park, T. H. Cha, K. Y. Lim, H. J. Cho, T. K. Kim, S. A. Jang, Y. S. Suh, V. Misra, I. S. Yeo, J. S. Roh, J. W. Park, and H. K. Yoon, "Robust ternary metal gate electrodes for dual gate CMOS devices," in IEDM Tech. Dig., 2000, p. 671.
10. Z. Wang, C. G. Parker, D. W. Hodge, R. T. Croswell, N. Yang, V. Misra, and J. R. Hauser, "Effect of polysilicon gate type on the flatband voltage shift for ultrathin oxide-nitride fate stacks," IEEE Electron Device Lett., vol. 21, pp. 170-172, Apr. 2000.
11. R. Beyers, "Thermodynamic considerations in refractory metal-silicon-oxygen systems," J. Appl. Phys., vol. 56, no. 1, July 1984.