Dual work function metal gate CMOS transistors by Ni-Ti interdiffusion

IEEE Electron Device Letters

Volumn 23, Issue 4, 2002, Pages 200-202

  Polishchuk, Igor ^a,b   Ranade, Pushkar ^a,c   King, Tsu Jae ^a,b   Hu, Chenming ^a,b  

^a IEEE   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c University of California at Berkeley   (United States)

Author keywords

Interdiffusion; Metal gate complementary metal oxide semiconductor (CMOS); Mobility; Nickel; Threshold voltage; Titanium; Work function

Indexed keywords

DRIVE CURRENT; GATE DIELECTRIC;

DIELECTRIC MATERIALS; GATES (TRANSISTOR); INTERDIFFUSION (SOLIDS); MOS DEVICES; NICKEL ALLOYS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICA; THRESHOLD VOLTAGE;

CMOS INTEGRATED CIRCUITS;

EID: 0036540912     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.992838     Document Type: Article

References (7)

1. 5 gate dielectric prepared by in-situ rapid thermal processing
2. 2 and Zr silicate gate dielectrics
3. Dual-metal gate CMOS technology with ultra-thin silicon nitride gate dielectric
4. Dual work function metal gate CMOS technology using metal interdiffusion
5. Dual work function CMOS gate technology based on metal interdiffusion
6. Inversion-layer capacitance and mobility of very thin gate-oxide MOSFETs