Feasibility of using W/TiN as metal gate for conventional 0.13 μm CMOS technology and beyond

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1997, Pages 825-828

  Hu, J C ^a   Yang, H ^a   Kraft, R ^a   Rotondaro, A L P ^a   Hattangady, S ^a   Lee, W W ^a   Chapman, R A ^a   Chao, C P ^a   Chatterjee, A ^a   Hanratty, M ^a   Rodder, M ^a   Chen, I C ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIRECT TUNNELING (DT) INJECTION; FOWLER NORDHEIM (FN) TUNNELING INJECTION; METAL GATES; REMOTE PLASMA NITRIDED OXIDE (RPNO);

ANNEALING; CURRENT DENSITY; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC RESISTANCE; ELECTRON TUNNELING; GATES (TRANSISTOR); INTEGRATED CIRCUIT MANUFACTURE; MOSFET DEVICES; SUBSTRATES; TITANIUM NITRIDE; TUNGSTEN;

CMOS INTEGRATED CIRCUITS;

EID: 84886448019     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)