Scanning tunneling microscopy studies of III-nitride thin film heteroepitaxial growth

Physics-Uspekhi

Volumn 47, Issue 4, 2004, Pages 371-391

  Bakhtizin, R Z ^a   Xue, Q Zh ^b   Xue, Q K ^c   Wu, K H ^b   Sakurai, T ^b  

^a Science and Education Center of Bashkir People History Ufa University of Science and Technology   (Russian Federation)

^b TOHOKU UNIVERSITY   (Japan)

^c INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 4344573517     PISSN: 10637869     EISSN: None     Source Type: Journal    
DOI: 10.1070/PU2004v047n04ABEH001643     Document Type: Review

References (101)

1. Nakamura S, Fasol G The Blue Laser Diode: GaN Based Light Emitters and Lasers (Berlin: Springer-Verlag, 1997)
2. Orton J W, Foxon C T Rep. Prog. Phys. 61 1 (1998)
3. Ambacher O J. Phys. D: Appl. Phys. 31 2653 (1998)
4. Pearton S J et al. J. Appl. Phys. 86 1 (1999)
5. Szweda R Gallium Nitride & Related Wide Bandgap Materials & Devices: a Market and Technology Overview 1998-2003 2nd ed. (Oxford, UK: Elsevier Adv. Technol., 2000)
6. Jain S C, Willander M, Van Overstraeten R Compound Semiconductors Strained Layers and Devices (Boston: Kluwer Acad. Publ., 2000)
7. Kikkawa J M, Awschalom D D Science 287 473 (2000)
8. Strite S, Morkoç H J. Vac. Sci. Technol. B 10 1237 (1992)
9. Amano H et al. Jpn. J. Appl. Phys. Pt. 2 28 L2112 (1989)
10. Nakamura S et al. Jpn. J. Appl. Phys. Pt. 1 31 1258 (1989)
11. Nakamura S, Mukai T, Senoh M Appl. Phys. Lett. 64 1687 (1994)
12. Nakamura S Science 281 956 (1998)
13. Popovici G, Morkoç H, Mohammad S N, in Group III Nitride Semiconductor Compounds: Physics and Applications (Ser. on Semiconductor Sci. and Technol., Vol. 6, Ed. B Gil) (Oxford: Clarendon Press, 1998) p. 16
14. Feenstra R M, Northrup J E, Neugebauer J MRS Internet J. Nitride Semicond. Res. 7 3 (2002)
15. Hellman E S MRS Internet J. Nitride Semicond. Res. 3 11 (1998)
16. Qian G-X, Martin R M, Chadi D J Phys. Rev. B 38 7649 (1988)
17. Massalski T B (Editor-in-Chief) Binary Alloy Phase Diagrams Vol. 2, 2nd ed. (Materials Park, Ohio: ASM Intern., 1990) p. 1824
18. Held R et al. J. Appl. Phys. 85 7697 (1999)
19. Masri P Surf. Sci. Rep. 48 1 (2002)
20. Starke U Phys. Status Solidi B 202 475 (1997)
21. Trampert A, Brandt O, Ploog K, in Gallium Nitride (GaN) I (Semiconductors and Semimetals, Vol. 57, Eds J I Pankove, T D Moustakas) (New York: Academic Press, 1998)
22. Okumura H et al. J. Cryst. Growth 178 113 (1997)
23. Kurobe T et al. Appl. Phys. Lett. 73 2305 (1998)
24. Lide D R (Ed.) Handbook of Chemistry and Physics (London: CRC Press, 1996) p. 76
25. Neumayer D A, Ekerdt J G Chem. Mater. 8 9 (1996)
26. Pavlovska A, Bauer E, Smith D J Surf. Sci. 496 160 (2002)
27. Bakhtizin R Z et al. Usp. Fiz. Nauk 167 1227 (1997) [Phys. Usp. 40 1175 (1997)]
28. Bakhtizin R Z et al. Usp. Fiz. Nauk 167 1227 (1997) [Phys. Usp. 40 1175 (1997)]
29. Muehlhoff L et al. J. Appl. Phys. 60 2842 (1986)
30. Kaplan R Surf. Sci. 215 111 (1989)
31. Li L, Tsong I S T Surf. Sci. 351 141 (1996)
32. Starke U et al. Appl. Surf. Sci. 89 175 (1995)
33. Burk A A (Jr), Rowland L B J. Cryst. Growth 167 586 (1996)
34. Owman F et al. J. Cryst. Growth 167 391 (1996)
35. Xue Q et al. Appl. Phys. Lett. 74 2468 (1999)
36. Bakhtizin R Z et al. Poverkhnost' (11) 4 (2000)
37. Martensson P, Owman F, Johansson L I Phys. Status Solidi B 202 501 (1997)
38. Heine V, Cheng C, Needs R J Am. Ceram. Soc. Bull. 74 2630 (1991)
39. Ohtani N et al. Surf. Sci. 398 L303 (1998)
40. Bernhardt J et al. Appl. Phys. Lett. 74 1084 (1999)
41. Kimoto T, Itoh A, Matsunami H Appl. Phys. Lett. 66 3645 (1995)
42. Bernhardt J et al. Mater. Sci. Eng. B 61-62 207 (1999)
43. Starke U et al. Surf. Rev. Lett. 6 1129 (1999)
44. Hoster H E, Kulakov M A, Bullemer B Surf. Sci. 382 L658 (1997)
45. Bermudez V M, Koleske D D, Wickenden A E Appl. Surf. Sci. 126 69 (1998)
46. Ponce F A et al. Appl. Phys. Lett. 69 337 (1996)
47. Smith A R et al. Phys. Rev. Lett. 79 3934 (1997)
48. Smith A R et al. Appl. Phys. Lett. 72 2114 (1998)
49. Smith A R et al. J. Vac. Sci. Technol. B 16 1641 (1998)
50. Pashley M D Phys. Rev. B 40 10481 (1989)
51. LaFemina J P Surf. Sci. Rep. 16 137 (1992)
52. Rouviere J L et al. Appl. Phys. Lett. 73 668 (1998)
53. Lin M E et al. Appl. Phys. Lett. 62 702 (1993)
54. Hughes W C et al. J. Vac. Sci. Technol. B 13 1571 (1995)
55. Hughes O H et al. J. Vac. Sci. Technol. B 16 2237 (1998)
56. Iwata K et al. Jpn. J. Appl. Phys. 35 L289 (1996)
57. Foxon C T et al. Surf. Sci. 421 377 (1999)
58. Thamm A et al. Appl. Phys. Lett. 75 944 (1999)
59. Di Felice R, Northrup J E, Neugebauer J Phys. Rev. B 54 R17351 (1996)
60. Fritsch J et al. Phys. Rev. B 57 15360 (1998)
61. Northrup J E, Di Felice R, Neugebauer J Phys. Rev. B 55 13878 (1997)
62. Rapcewicz K, Nardelli M B, Bernholc J Phys. Rev. B 56 R12725 (1997)
63. Smith A R et al. Appl. Phys. A 66 S947 (1998)
64. Smith A R et al. MRS Internet J. Nitride Semicond. Res. 3 12 (1998)
65. Smith A R et al. Surf. Sci. 423 70 (1999)
66. Xue Q-K et al. Phys. Rev. Lett. 82 3074 (1999)
67. Stroscio J A, Kaiser W J (Eds) Scanning Tunneling Microscopy (Boston: Academic Press, 1993)
68. Bakhtizin R Z et al. Poverkhnost' (11) 9 (2000)
69. Vanderbilt D Phys. Rev. B 41 7892 (1990)
70. Ramachandran V et al. J. Cryst. Growth 209 355 (2000)
71. Ramachandran V et al. Appl. Phys. Lett. 75 808 (1999)
72. Vézian S et al. Surf. Sci. 541 242 (2003)
73. Peierls R E Quantum Theory of Solids (Oxford: Clarendon Press, 1955) p. 108
74. Neugebauer J et al. Phys. Rev. Lett. 80 3097 (1998)
75. Grüner G Density Waves in Solids (Reading, Mass.: Addison-Wesley, 1994); Grüner G, Zettl A Phys. Rep. 119 117 (1985)
76. Grüner G Density Waves in Solids (Reading, Mass.: Addison-Wesley, 1994); Grüner G, Zettl A Phys. Rep. 119 117 (1985)
77. Duke C B Appl. Surf. Sci. 65/66 543 (1993)
78. Xue Q-Zh et al. Phys. Rev. B 59 12604 (1999)
79. Bakhtizin R Z et al. Phys. Low-Dim. Struct. (3/4) 243 (2001)
80. Smith A R et al. J. Vac. Sci. Technol. B 16 2242 (1998)
81. Northrup J E et al. Phys. Rev. B 61 9932 (2000)
82. Xie M H et al. Phys. Rev. Lett. 82 2749 (1999)
83. Capaz R B, Lim H, Joannopoulos J D Phys. Rev. B 51 17755 (1995)
84. Ponce F A, Van de Walle C G, Northrup J E Phys. Rev. B 53 7473 (1996)
85. Visconti P et al. Phys. Status Solidi B 228 513 (2001)
86. Zyweitz T, Neugebauer J, Scheffler M Appl. Phys. Lett. 73 487 (1998)
87. Feuillet G et al. Appl. Phys. Lett. 70 1025 (1997)
88. Tarsa E J et al. J. Appl. Phys. 82 5472 (1997)
89. Bakhtizin R Z et al. Zh. Eksp. Teor. Fiz. 111 1858 (1997) [JETP 84 1016 (1997)]
90. Bakhtizin R Z et al. Zh. Eksp. Teor. Fiz. 111 1858 (1997) [JETP 84 1016 (1997)]
91. Daudin B et al. J. Appl. Phys. 84 2295 (1998)
92. Schikora D et al. Phys. Rev. B 54 R8381 (1996)
93. Brandt O et al. Phys. Rev. B 52 R2253 (1995)
94. Okumura H et al. Appl. Phys. Lett. 72 3056 (1998)
95. Heller E J, Zhang Z Y, Lagally M G Phys. Rev. Lett. 71 743 (1993)
96. Trampert A et al. Appl. Phys. Lett. 70 583 (1997)
97. Gwo S, Tokumoto H, Miwa S Appl. Phys. Lett. 71 362 (1997)
98. Bykhovski A D, Shur M S Appl. Phys. Lett. 69 2397 (1996)
99. Yang H et al. Appl. Surf. Sci. 104/105 461 (1996)
100. Ploog K H et al. J. Vac. Sci. Technol. B 16 2229 (1998)
101. Yeh C-Y et al. Phys. Rev. B 46 10086 (1992)