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Journal of Crystal Growth

Volumn 167, Issue 1-2, 1996, Pages 391-395

Removal of polishing-induced damage from 6H-SiC(0001) substrates by hydrogen etching

(4) Owman, Fredrik a Hallin, C a Mårtensson, Per a Janzen E a

a LINKÖPING UNIVERSITY (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; ELECTRON DIFFRACTION; EPITAXIAL GROWTH; ETCHING; MORPHOLOGY; SCANNING TUNNELING MICROSCOPY; SILICON COMPOUNDS; SILICON WAFERS; SUBLIMATION; SURFACE STRUCTURE;

HYDROGEN ETCHING; LOW ENERGY ELECTRON DIFFRACTION PATTERNS; POLISHING INDUCED DAMAGE;

CRYSTAL GROWTH;

EID: 0030565227 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/0022-0248(96)00296-5 Document Type: Article

Times cited : (138)

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