Atomic-scale nature of the (3×3)-ordered GaAs(001):N surface prepared by plasma-assisted molecular-beam epitaxy

Applied Physics Letters

Volumn 71, Issue 3, 1997, Pages 362-364

  Gwo, S ^a,c   Tokumoto, H ^a   Miwa, S ^b  

^a NATL INST FOR ADV INTERDISC RES   (Japan)

^b JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

^c NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000390722     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119538     Document Type: Article

References (20)

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