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Volumn 104-105, Issue , 1996, Pages 461-467

Initial stage of growth of GaN/GaAs(001) in plasma-assisted molecular beam epitaxy

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; GALLIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; MONOLAYERS; NITROGEN COMPOUNDS; NUCLEATION; PLASMA APPLICATIONS; THICK FILMS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 18344399897 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(96)00187-0 Document Type: Article

Times cited : (17)

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