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Surface Science

Volumn 496, Issue 3, 2002, Pages 160-178

In situ studies of the role of excess Ga on the growth morphology of thin GaN layers

(3) Pavlovska, A a Bauer, E a Smith, David J a

a ARIZONA STATE UNIVERSITY (United States)

Author keywords

Epitaxy; Gallium; Gallium nitride; Growth; Low energy electron diffraction (LEED); Low energy electron microscopy (LEEM)

Indexed keywords

LIQUID PHASE EPITAXY; LOW ENERGY ELECTRON DIFFRACTION; MORPHOLOGY; THERMODYNAMICS; TRANSMISSION ELECTRON MICROSCOPY;

MICROFACETING; SURFACE PREPARATIONS;

GALLIUM NITRIDE;

EID: 0037050210 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(01)01616-8 Document Type: Article

Times cited : (13)

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