Energetics of AlN thin films and the implications for epitaxial growth on SiC

Physical Review B - Condensed Matter and Materials Physics

Volumn 54, Issue 24, 1996, Pages R17351-R17354

  Felice, R Di ^a   Northrup, J ^a   Neugebauer, J ^b  

^a PALO ALTO RESEARCH CENTER   (United States)

^b FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005946599     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.54.R17351     Document Type: Article

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