Silicon carbide and silicon carbide-based structures: The physics of epitaxy

Surface Science Reports

Volumn 48, Issue 1-4, 2002, Pages 1-51

  Masri, Pierre ^a  

^a UNIVERSITÉ MONTPELLIER 2   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; NITRIDES; PHONONS; SOLID SOLUTIONS; SUBSTRATES;

HOMOEPITAXY;

SILICON CARBIDE;

EID: 0036843744     PISSN: 01675729     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0167-5729(02)00099-7     Document Type: Review

References (106)

1. R.C. Marshall, J.W. Faust Jr., C.E. Ryan (Eds.), in: Proceedings of the International Conference on Silicon Carbide, Miami Beach, FL, September 17-20, 1973, University of South Carolina Press, 1974.
2. Moore W.J., Lin-Chung P.J., Freitas J.A. Jr., Altaiskii Y.M., Zuev V.L., Ivanova L.M. Phys. Rev. 48 1993 12289.
3. Patrick L., Hamilton D.R., Choyke J.W. Phys. Rev. 132 1963 2023.
4. K. Nakashima, O. Eryu, Y. Nishikuni, in: Proceedings of the MRS Fall Meeting 2000 Symposium H, Paper H5.33, Materials Research Society.
5. Tang L., Mehregany M., Matus L.G. Appl. Phys. Lett. 60 1992 2992.
6. Morvan E., Noblanc O., Dua C., Brylinski C. Mater. Sci. Forum 353-356 2000 669.
7. Nishikawa K., Shimizu M., Foster B., Iwakuro H. Mater. Sci. Forum 353-356 2001 611.
8. Carter C.H. Jr., Glass R., Brady M., Malta D., Henshall D., Müller S., Tsvetkov V., Hobgood D., Powell A. Mater. Sci. Forum 353-356 2001 3.
9. S.M. Sze, Physics of Semiconductor Devices, 2nd ed., Wiley/Interscience, New York, 1981.
10. Müller St.G., Glass R.C., Hobgood H.M., Tsvetkov V.F., Brady M., Henshall D., Jenny J.R., Malta D., Carter C.H. Jr. J. Cryst. Growth 211 2000 325.
11. Müller St.G., Eckstein R., Hartung W., Hofman D., Kolbl M., Pensl G., Schmitt E., Schmitt E.J., Weber A.D., Winnacker A. Mater. Sci. Forum 264-268 2000 3.
12. Si W., Dudley M., Glass R., Tsvetkov V., Crater C. Jr. J. Electron. Mater. 26 1997 128.
13. Frank F.C. Acta Cryst. 4 1950 497.
14. (a) Burton W.K., Cabrera N., Frank F.C. Nat. London 163 1949 398.
15. (b) Burton W.K., Cabrera N., Frank F.C. Philos. Trans. A 243 1951 299.
16. Lely J.A. Ber. Dt. Keram. Ges. 32 1955 229.
17. Tairov Yu.M., Tsvetkov V.F. J. Cryst. Growth 52 1981 146.
18. Tairov Yu.M., Tsvetkov V.F. J. Cryst. Growth 43 1978 209.
19. Moulin C., Pons M., Pisch A., Grosse P., Faure C., Basset A., Basset G., Passero A., Billon T., Pelissier B., Anikin M., Pernot E., Pernot-Rejmankova P., Madar R. Mater. Sci. Forum 353-356 2001 7.
20. R. Madar, M. Anikin, K. Chourou, E. Blanquet, M. Pons, C. Bernard, in: Proceedings of the MRS Fall Meeting 1997 Symposium E on Power Semiconductor Materials and Devices, vol. 483, Materials Research Society, December 1-4, 1997.
21. Wellmann P.J., Bickermann M., Grau M., Hofmann D., Straubinger T.L., Winnacker A. Mater. Res. Soc. Symp. Proc. 572 1999 259.
22. Schmitt E., Rasp M., Weber A.-D., Kölbl M., Eckstein R., Kadinski L., Selder M. Mater. Sci. Forum 353-356 2001 15.
23. Forty A.J. Philos. Mag. 43 1952 72.
24. Mardix S., Lang A.R., Blech I. Philos. Mag. 24 1971 683.
25. Baronnet A. J. Cryst. Growth 19 1973 193.
26. Qian W., Skowronski M., Doverspike K., Rowland L.B., Gaskill D.K. J. Cryst. Growth 151 1995 396.
27. A.R. Verma, Crystal Growth and Dislocations, Butterworths, London, 1953.
28. Dudley M., Wang S., Huang W., Carter C.H. Jr., Tsvetkov V.F., Fazi C. J. Phys. D 28 1995 A63.
29. Augustine G., Hobgood H.McD., Balakrishna V., Dunne G., Hopkins R.H. Phys. Stat. Sol. (b) 202 1997 137.
30. Koga K., Fujikawa Y., Ueda Y., Yamaguchi T. Springer Proc. Phys. 71 1992 96.
31. J. Yang, Problems in crystal growth and polytypic transformation, Ph.D. Thesis, Case Western Reserve University, Cleveland, OH, 1993.
32. Mitchell J.W. J. Appl. Phys. 33 1962 406.
33. K. Nakayama, Y. Miyanagi, H. Shiomi, S. Nishino, T. Kimoto, H. Matsunami, in: Proceedings of the International Conference on SiC and Related Materials (ICSCRM'2001), Technical Digest, 2001, p. 283.
34. H. Matsunami, in: Proceedings of the International Conference on SiC and Related Materials (ICSCRM'2001), Technical Digest, 2001, p. 3.
35. J.P. Bergman, L. Storasta, S. Sridihara, F. Carlsson, B. Magnusson, H. Jakobsson, P. Persson, H. Lendenmann, E. Janzen, in: Proceedings of the International Conference on SiC and Related Materials (ICSCRM'2001), Technical Digest, 2001, p. 4.
36. Choyke W.J., Patrick L. Phys. Rev. B 4 1971 1843.
37. Persson P.O.A., Skorupa W., Panknin D., Kuznetsov A., Hallén A., Hultman L. Mater. Res. Soc. Symp. Proc. 640 2001 H6.2.1.
38. Pezoldt J., Yankov R.A., Werninghaus T., Zahn D.R.T., Fukarek W., Teichert G., Luebbe M., Skorupa W. Diam. Relat. Mater. 8 1999 346.
39. A.R. Verma, P. Krishna, Polymorphism and polytypism in crystals, Monographs in Crystallography, Wiley, New York, 1966.
40. Lee C.D., Feenstra R.M., Shigiltchoff O., Devaty R.P., Choyke W.J. Mater. Res. Soc. Symp. Proc. 693 2002 I3.40.1.
41. Park C.I., Kang J.H., Kim K.C., Lim K.Y., Suh E.-K., Nahm K.S. Mater. Res. Soc. Symp. Proc. 693 2002 G3.25.1.
42. Groenert M.E., Leitz C.W., Pitera A.J., Yang V.K., Lee H., Ram R.J., Fitzgerald E.A. Mater. Res. Soc. Symp. Proc. 693 2002 H9.30.1.
43. Hirayama H., Ainoya M., Kinoshita A., Hirata A., Aoyagi Y. Mater. Res. Soc. Symp. Proc. 639 2002 G1.3.1.
44. Bourret A., Fuoss P.H. Appl. Phys. Lett. 61 1992 1034.
45. C. Kittel, Introduction to Solid State Physics, 3rd ed., Wiley, New York, 1968, p. 119.
46. Masri P. Phys. Rev. B 37 1988 8462.
47. Masri P. Phys. Rev. B 39 1989 10384.
48. Masri P. Phys. Rev. B 49 1994 2185.
49. J.W. Matthews, Epitaxial Growth, Part B, Academic Press, New York, 1975, p. 505.
50. Matthews J.W. J. Vac. Sci. Technol. 12 1975 126.
51. Masri P., Langlade P. J. Phys. C 15 1982 6857.
52. Okuno Y., Kawano T., Tsuchiya T., Taniwatari T. Jpn. J. Appl. Phys. 32 1993 614.
53. Okuno Y., Kawano T. J. Cryst. Growth 145 1994 338.
54. Soga T., Jimbo T., Umeno M. Appl. Phys. Lett. 56 1990 1433.
55. Ainbow M., Cheng T.T., Mason N.J., Seong T.-Y., Walker P.J. J. Cryst. Growth 133 1993 168.
56. Zhao J.H., Li A.Z., Jeong J., Wong D., Lee J.C., Milliman M.L., Schlesinger T.E., Milnes A.G. J. Vac. Sci. Technol. B 6 1988 627.
57. Kang J.M., Rocher A. Philos. Mag. Lett. 70 1994 363.
58. Waho T., Ogawa S., Maruyama S. Jpn. J. Appl. Phys. 16 1977 1875.
59. Chang C.A., Ludeke R., Chang L.L., Esaki L. Appl. Phys. Lett. 31 1977 759.
60. Claverie A., Fauré J., Balladore J.L., Simon L., Mesli A., Diani M., Kubler L., Aubel D. J. Cryst. Growth 157 1995 420.
61. Chang C.A., Ludeke R., Chang L.L., Esaki L. Appl. Phys. Lett. 31 1977 759.
62. Waho T., Ogawa S., Maruyama S. Jpn. J. Appl. Phys. 16 1977 1875.
63. Simon L., Kübler L., Bischoff J.L., Bolmont D., Faure J., Claverie A., Balladore J.L. Phys. Rev. B 54 1996 10559.
64. Osten H.J., Methfessel M., Lippert G., Rücker H. Phys. Rev. B 52 1995 121179.
65. Rücker H., Methfessel M., Bugiel E., Osten H.J. Phys. Rev. Lett. 72 1994 3578.
66. Masri P., Moreaud N., Calas J., Averous M. Mater. Sci. Forum 264-268 1998 315.
67. Masri P. Mater. Sci. Eng. B 46 1997 195.
68. J. Camassel, C. Dezauzier, L. Di Cioccio, J. Stoemenos, J.M. Bluet, S. Contreras, J.L. Robert, in: Proceedings of the ICSCRM'1995, Technical Digest, Kyoto, Japan, 1995, p. 397.
69. Osten H.J., Bugiel E., Zaumseil P. Appl. Phys. Lett. 64 1994 3440.
70. Hatayama T., Tanaka N., Fuyuki T., Matsunami H. J. Electron. Mater. 26 1997 160.
71. Zekentes K., Tsagaraki K. Mater. Sci. Eng. B 61-62 1999 559.
72. Mitchel S., Spencer M.G., Wongchotigul K. Mater. Sci. Forum 264-268 1998 231.
73. Masri P. Phys. Rev. B 52 1995 16627.
74. Fissel A., Pfenninghaus K., Kaiser U., Kräuβlich J., Hobert H., Schröter B., Richter W. Mater. Sci. Forum 264-268 1998 255.
75. Pezoldt J., Cimalla V., Stauden Th., Ecke G., Eichhorn G., Scharmann F., Schipanski D. Diam. Relat. Mater. 6 1997 1311.
76. Ichikawa T., Ino S. Surf. Sci. 136 1984 267.
77. Martensson P., Ni W.-X., Hansson G.V. Phys. Rev. B 36 1987 5974.
78. Zhang B., Northrup J.E., Cohen M.L. Surf. Sci. 145 1984 L465.
79. Hasegawa S., Iwasaki H., Li S.-T., Nakamura S. Phys. Rev. B 32 1985 6949.
80. Ruvimov S., Bugiel E., Osten H.J. J. Appl. Phys. 78 1995 2323.
81. J.W. Matthews, Epitaxial Growth, Part B, Academic Press, New York, 1975, p. 505.
82. Froyen S., Wei S.-H., Zunger A. Phys. Rev. B 38 1988 10124.
83. C. Kittel, Introduction to Solid State Physics, 3rd ed., Wiley, New York, 1968, p. 119 (Eq. (31)).
84. Eberl K., Iyer S.S., Tsang J.C., Goorsky M.S., Legoues F.K. J. Vac. Sci. Technol. B 10 1992 934.
85. Song Z., Zhang F., Guo Y., Chen G. Appl. Phys. Lett. 65 1994 2669.
86. Okamoato M., Utsumi Y., Osaka Y. Jpn. J. Appl. Phys. 31 1992 3455.
87. Kester D.J., Messier R. J. Appl. Phys. 72 1992 504.
88. Friedmann T.A., Mirkarimi P.B., Medlin D.L., McCarty K.F., Klaus E.J., Boehme D.R., Johnsen H.A., Mills M.J., Ottesen D.K., Barbour J.C. J. Appl. Phys. 76 1994 3088.
89. Yamashita N., Wada T., Ogawa M.et al. Surf. Coat. Technol. 54-55 1992 418.
90. Kester D.J., Ailey K.S., Lichtenwalner D.J., Davis R.F. J. Vac. Sci. Technol. A 12 1994 3074.
91. Mirkarimi P.B., Medlin D.L., McCarty K.F., Barbour J.C. Appl. Phys. Lett. 66 1995 2813.
92. Hahn J., Richter F., Pintaske R., Röder M., Schneider E., Welzel Th. Surf. Coat. Technol. 92 1997 129.
93. Gimeno S., Andujar J.L., Lousa A. Diam. Relat. Mater. 6 1997 604.
94. Hofsäss H., Ronning C., Griesmeier U., Gross M., Reinke S., Kuhr M. Appl. Phys. Lett. 67 1995 46.
95. J. Pascalon, Microstructure et nucleation du nitrure de bore cubique synthétisé sous irradiation ionique: Influence du substrat, effets thermiques, Université de Paris 11, Ph.D. Thesis, Id. no. 98PA112174, Orsay, 1998.
96. Lûthje H., Bewilogua K., Daaud S., Johansson M., Hultman L. Thin Solid Films 257 1995 40.
97. Mirkarimi P.B., McCarty K.F., Cardinale G.F., Medlin D.L., Ottessen D.K. J. Vac. Sci. Technol. A 14 1996 251.
98. Froyen S., Wei S.-H., Zunger A. Phys. Rev. B 38 1988 10124.
99. C. Kittel, Introduction to Solid State Physics, 4th ed., Wiley, New York, 1971.
100. Pezoldt J., Yankov R.A., Werninghaus T., Zahn D.R.T., Fukarek W., Teichert G., Luebbe M., Skorupa W. Diam. Relat. Mater. 8 1999 346.
101. Pezoldt J., Yankov R.A., Mücklich A., Fukarek W., Voelskow M., Reuther H., Skorupa W. Nucl. Instrum. Meth. Phys. Res. B 147 1999 273.
102. A.G. Khachaturyan, Theory of Structural Transformations in Solids, Wiley, New York, 1983.
103. G.L. Harris (Ed.), Properties of Silicon Carbide (EMIS), Datareviews Series No. 13, 1995, pp. 3-12.
104. K. Tsubouchi, K. Sugai, N. Mikishiba, in: Ultrasonics Symposium Proceedings, IEEE, New York, 1981, p. 375.
105. Meng W.J., Sell J.A., Perry T.A., Eesley G.L. J. Vac. Sci. Technol. A 11 1993 1377.
106. Kim K., Lambrecht W.R.L., Segall B. Phys. Rev. B 53 1996 16310.