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Applied Physics Letters

Volumn 72, Issue 23, 1998, Pages 3056-3058

Arsenic surfactant effects and arsenic mediated molecular beam epitaxial growth for cubic GaN

(5) Okumura, H a Hamaguchi, H b Feuillet, G c Ishida, Y a Yoshida, S a

a ELECTROTECHNICAL LABORATORY (Japan)

b TOKYO UNIVERSITY OF SCIENCE (Japan)

c Observatoire des Sciences de LUnivers de Grenoble (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000528915 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.121539 Document Type: Article

Times cited : (60)

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