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Applied Physics A: Materials Science and Processing

Volumn 66, Issue SUPPL. 1, 1998, Pages

Scanning tunneling microscopy of the GaN(0001̄) surface

(5) Smith, A R a Feenstra, R M a Greve, D W b Neugebauer, J c Northrup, J E d

a CARNEGIE MELLON UNIVERSITY (United States)

b CARNEGIE MELLON UNIVERSITY (United States)

c FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT (Germany)

d PALO ALTO RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN; HIGHER ORDER; IN-SITU; ORDER/DISORDER PHASE TRANSITION; QUANTITATIVE MEASUREMENT; STM IMAGES; STRUCTURAL MODELS; SUBMONOLAYER;

ATOMS; GALLIUM ALLOYS; MODEL STRUCTURES; PHASE TRANSITIONS; REPAIR; SCANNING TUNNELING MICROSCOPY; WIND TUNNELS;

GALLIUM NITRIDE;

EID: 0000497059 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s003390051272 Document Type: Article

Times cited : (29)

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