Relation between the ion flux, gas phase composition, and wall conditions in chlorine plasma etching of silicon

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 21, Issue 3, 2003, Pages 589-595

  Ullal, Saurabh J ^a   Kim, Tae Won ^a   Vahedi, Vahid ^b   Aydil, Eray S ^a  

^a University of California   (United States)

^b LAM RESEARCH CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; CHLORINE; DEPOSITION; EMISSION SPECTROSCOPY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INDUCTIVELY COUPLED PLASMA; PHASE COMPOSITION; PLASMA DIAGNOSTICS; PLASMA ETCHING; SEMICONDUCTING SILICON COMPOUNDS;

GAS PHASE COMPOSITION; INDUCTIVELY COUPLED PLASMA ETCHING; MULTIPLE TOTAL INTERNAL REFLECTION SPECTROSCOPY; SILICON CHLORIDE; SILICON OXYNITRIDE FILM; SURFACE DIAGNOSTICS;

SILICON WAFERS;

EID: 0038274546     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1562176     Document Type: Article

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