Physical and electrical properties of lanthanide-incorporated tantalum nitride for n -channel metal-oxide-semiconductor field-effect transistors

Applied Physics Letters

Volumn 87, Issue 7, 2005, Pages

  Ren, C ^a   Chan, D S H ^a   Wang, X P ^a   Faizhal, B B ^a   Li, M F ^a   Yeo, Y C ^a   Trigg, A D ^b   Agarwal, A ^b   Balasubramanian, N ^b   Pan, J S ^c   Lim, P C ^c   Huan, A C H ^c   Kwong, D L ^d  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^d The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINITY; FILM COMPOSITION; METAL GATES; THERMAL ANNEALING;

CMOS INTEGRATED CIRCUITS; COMPOSITION; CONCENTRATION (PROCESS); CRYSTALLINE MATERIALS; ELECTRIC PROPERTIES; FIELD EFFECT TRANSISTORS; PHYSICAL PROPERTIES; RARE EARTH ELEMENTS;

MOSFET DEVICES;

EID: 24144439320     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1947901     Document Type: Article

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