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Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 16, Issue 3, 1998, Pages 1440-1443

Evaluation of plasma charging damage during polysilicon gate etching process in a decoupled plasma source reactor

(3) Ma, Shawming a Jain, Mohit b Chinn, J D b

a HEWLETT PACKARD LABORATORIES (United States)

b APPLIED MATERIALS INC (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTENNA RATIOS; BIAS POWER; BREAKDOWN VOLTAGE; GATE LEAKAGES; GATE OXIDE; HIGH DENSITY; INDUCED DAMAGE; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; MICROLOADING; MINIMUM DAMAGE; OPTIMIZED PROCESS; OVER-ETCH; PLASMA CHARGING; POLY GATES; POLYSILICON GATES; PROCESS WINDOW; PUNCH-THROUGH; SOFT LANDING; THIN GATE OXIDES; VERTICAL PROFILE;

BOUNDARY LAYER FLOW; ETCHING; GATES (TRANSISTOR); MOS DEVICES; PLASMA APPLICATIONS; PLASMA SOURCES; POLYSILICON;

GATE DIELECTRICS;

EID: 0001563375 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.581165 Document Type: Article

Times cited : (38)

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