Dry etching characteristics of TiN film using Ar/CHF3, Ar/Cl2, and Ar/BCl3 gas chemistries in an inductively coupled plasma

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 5, 2003, Pages 2163-2168

  Tonotani, J ^a,b   Iwamoto, T ^a   Sato, F ^a   Hattori, K ^a   Ohmi, S ^b   Iwai, H ^b  

^a TOSHIBA CORPORATION   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITION REACTIONS; AUGER ELECTRON SPECTROSCOPY; DEPOSITION; DRY ETCHING; EVAPORATION; FLUOROCARBONS; GASES; INDUCTIVELY COUPLED PLASMA; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; VAPOR PRESSURE; X RAY PHOTOELECTRON SPECTROSCOPY;

BORON TRICHLORIDE; GAS CHEMISTRIES; NONVOLATILE COMPOUNDS;

TITANIUM NITRIDE;

EID: 0242509076     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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