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Journal of the Electrochemical Society

Volumn 153, Issue 5, 2006, Pages

Metal wet etch issues and effects in dual metal gate stack integration

(4) Hussain, Muhammad Mustafa a,b Moumen, Naim a,c Zhang, Zhibo a Womack, Baxter F b

a SEMATECH (United States)

b UNIVERSITY OF TEXAS AT AUSTIN (United States)

c ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ETCHING; PERMITTIVITY; SILICA; THERMODYNAMIC STABILITY;

ETCH SELECTIVITY; SURFACE CONDITIONS; TETRAETHYLORTHOSILICATE;

GATES (TRANSISTOR);

EID: 33645688684 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.2178627 Document Type: Article

Times cited : (13)

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