Molybdenum as a gate electrode for deep sub-micron CMOS technology

Materials Research Society Symposium - Proceedings

Volumn 611, Issue , 2001, Pages

  Ranade, P ^a   Yeo, Y C ^a   Lu, Q ^a   Takeuchi, H ^a   King, T J ^a   Hu, C ^a  

^a Lawrence Berkeley National Laboratory   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEPOSITION; ELECTRODES; ENERGY GAP; ETCHING; GATES (TRANSISTOR); MOLYBDENUM; POLYSILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SILICA; SILICON WAFERS; THERMAL EFFECTS;

GATE ELECTRODES; WORK FUNCTION;

CMOS INTEGRATED CIRCUITS;

EID: 0035026423     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)