Metal wet etch process development for dual metal gate CMOS

Electrochemical and Solid-State Letters

Volumn 8, Issue 12, 2005, Pages

  Hussain, Muhammad Mustafa ^a,b   Moumen, Naim ^a,d   Barnett, Joel ^a,d   Saulters, Jason ^c   Baker, David ^c   Zhang, Zhibo ^a  

^a SEMATECH   (United States)

^b UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^c ATDF   (United States)

^d ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; PHYSICAL VAPOR DEPOSITION; TANTALUM; TANTALUM COMPOUNDS; TITANIUM NITRIDE;

ETCH SELECTIVITY; GATE DIELECTRIC FILMS; GATE MATERIALS; WET ETCH PROCESSES;

ETCHING;

EID: 28044436072     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2081827     Document Type: Article

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