SCOPUS 정보 검색 플랫폼

Electrochemical and Solid-State Letters

Volumn 4, Issue 11, 2001, Pages

Work function engineering of molybdenum gate electrodes by nitrogen implantation

(4) Ranade, Pushkar a Takeuchi, Hideki b King, Tsu Jae b Hu, Chenming b

a Lawrence Berkeley National Laboratory (United States)

b UNIVERSITY OF CALIFORNIA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITORS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POTENTIAL; ENERGY GAP; GATES (TRANSISTOR); ION IMPLANTATION; MOLYBDENUM; NITROGEN; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; SILICA;

MOLYBDENUM GATE ELECTRODES; SILICON ENERGY BANDGAP; WORK FUNCTION ENGINEERING;

ELECTRODES;

EID: 0035525694 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.1402497 Document Type: Article

Times cited : (104)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.