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Journal of Materials Science

Volumn 41, Issue 3, 2006, Pages 779-792

Defect structure in GaN pyramids

(2) Farrer, Jeffrey K a Carter, C Barry b

a Brigham Young University (United States)

b UNIVERSITY OF MINNESOTA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT STRUCTURE; GAN PYRAMIDS; GROWTH MECHANISM; THREADING DISLOCATIONS;

ALUMINUM NITRIDE; DEPOSITION; DISLOCATIONS (CRYSTALS); INTERFACES (MATERIALS); SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH;

GALLIUM NITRIDE;

EID: 33644533863 PISSN: 00222461 EISSN: 15734803 Source Type: Journal
DOI: 10.1007/s10853-006-6563-2 Document Type: Article

Times cited : (15)

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