Two-step epitaxial lateral overgrowth of GaN

Materials Chemistry and Physics

Volumn 82, Issue 1, 2003, Pages 55-60

  Ko, C H ^a   Su, Y K ^a   Chang, S J ^a   Tsai, T Y ^a   Kuan, T M ^a   Lan, W H ^b   Lin, J C ^b   Lin, W J ^b   Cherng, Y T ^b   Webb, James B ^c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

^c NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

Epitaxial lateral overgrowth (ELO); Etch pits density (EPD); GaN; Metalorganic vapor phase epitaxy (MOVPE)

Indexed keywords

METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; SILICA; SURFACE ROUGHNESS;

EPITAXIAL LAYERS;

GALLIUM NITRIDE;

EID: 0042131686     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0254-0584(03)00228-1     Document Type: Article

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