Transmission electron microscopy study of an AlN nucleation layer for the growth of GaN on a 7-degree off-oriented (0 0 1) Si substrate by metalorganic vapor phase epitaxy

Journal of Crystal Growth

Volumn 260, Issue 3-4, 2004, Pages 360-365

  Tanaka, Shigeyasu ^a   Honda, Yoshio ^a   Kameshiro, Norifumi ^a   Iwasaki, Ryuta ^a   Sawaki, Nobuhiko ^a   Tanji, Takayoshi ^a   Ichihashi, Mikio ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

A1. Defects; A1. Interface; A1. Nucleation; A3. Metalorganic vapor phase epitaxy; A3. Selective epitaxy; B1. Nitrides

Indexed keywords

DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; ETCHING; GALLIUM NITRIDE; HIGH TEMPERATURE EFFECTS; INTERFACES (MATERIALS); LOW TEMPERATURE EFFECTS; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; NUCLEATION; SEMICONDUCTOR LASERS; SILICON; SINGLE CRYSTALS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

GROWTH SPECIES; GROWTH TECHNIQUES; LATERAL OVERGROWTH; VAPOR PHASES;

ALUMINUM NITRIDE;

EID: 0345602932     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.08.074     Document Type: Article

References (22)

1. Akasaki I., Amano H., Koide Y., Hiramatsu K., Sawaki N. J Crystal Growth. 98:1989;209.
2. Wu X.H., Kapolnek D., Tarsa E.J., Heying B., Keller S., Keller B.P., Mishra U.K., DenBaars S.P., Speck J.S. Appl. Phys. Lett. 68:1996;1371.
3. Ito T., Sumiya M., Takano Y., Ohtsuka K., Fuke F. Jpn. J. Appl. Phys. 38:1999;649.
4. Keller S., Kapolnek D., Keller B.P., Wu Y., Heying B., Speck J.S., Mishra U.K., Denbaars S.P. Jpn. J. Appl. Phys. 35:1996;L285.
5. Kim K.S., Oh C.S., Lee K.J., Yang G.M., Hong C.-H., Lim K.Y., Lee H.J., Yoshikawa A. J. Appl. Phys. 85:1999;8441.
6. Lorenz K., Gonsalves M., Kim W., Narayanan V., Mahajan S. Appl. Phys. Lett. 77:2000;3391.
7. Qian W., Skowronski M., Graef M.De., Doverspike K., Rowland L.B., Gaskill D.K. Appl. Phys. Lett. 66:1995;1252.
8. Chien F.R., Ning X.J., Stemmer S., Pirouz P., Bremser M.D., Davis R.F. Appl. Phys. Lett. 68:1996;2678.
9. Wu X.H., Brown L.M., Kapolnek D., Keller S., Keller B., DenBaars S., Speck J.S. J. Appl. Phys. 80:1996;3228.
10. Ponce F.A., Cherns D., Young W.T., Steeds J.W. Appl. Phys. Lett. 69:1996;770.
11. Potin V., Vermaut P., Ruterana P., Nouet G. J. Electronic Materials. 27:1998;266.
12. Sakai A., Sunakawa H., Usui A. Appl. Phys. Lett. 71:1997;2259.
13. Hao M., Mahanty S., Sugahara T., Morishima Y., Takenaka H., Wang J., Tottori S., Nishino K., Naoi Y., Sakai S. J. Appl. Phys. 85:1999;6497.
14. Zheleva T.S., Nam O., Bremser M.D., Davis R.F. Appl. Phys. Lett. 71:1997;2472.
15. Nakamura S., Senoh M., Nagahama S., Iwasa N., Yamada T., Matsushita T., Kiyoku H., Sugimoto Y., Kozaki T., Umemoto H., Sano M., Chocho K. Jpn. J. Appl. Phys. 36:1997;L1568.
16. Mao Z., McKernan S., Carter C.B., Yang W., McPherson S.A. MRS Internet J. Nitride Semicond. Res. 4Sl:1999;G3.13.
17. Marchand H., Zhang N., Zhao L., Golan Y., Rosner S.J., Girolami G., Fini P.T., Ibbetson J.P., Keller S., DenBaars S., Speck J.S., Mishra U.K. MRS Internet J. Nitride Semicond. Res. 4:1999;2.
18. Kobayashi N.P., Kobayashi J.T., Zhang X., Dapkus P.D., Rich D.H. Appl. Phys. Lett. 74:1999;2836.
19. Kawaguchi Y., Honda Y., Matsushima H., Yamaguchi M., Hiramatsu K., Sawaki N. Jpn. J. Appl. Phys. 37:1998;L966.
20. Tanaka S., Honda Y., Sawaki N., Hibino M. Appl. Phys. Lett. 79:2001;955.
21. Honda Y., Kameshiro M., Yamaguchi M., Sawaki N. J. Crystal Growth. 242:2002;82.
22. Narayanan V., Lorenz K., Kim W., Mahajan S. Appl. Phys. Lett. 78:2001;1544.