Investigation of dislocations and defects in epitaxial lateral overgrown GaN by photoelectrochemical wet etching

Materials Letters

Volumn 57, Issue 8, 2003, Pages 1365-1368

  Wang, F ^a   Zhang, R ^a   Xiu, X Q ^a   Chen, K L ^a   Gu, S L ^a   Shen, B ^a   Zheng, Y D ^a   Kuech, T F ^b  

^a NANJING UNIVERSITY   (China)

^b Wisconsin Electric Machines and Power Electronics Consortium   (United States)

Author keywords

Dislocations and defects; ELO GaN; PEC wet etching

Indexed keywords

DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; ETCHING; PHOTOCURRENTS; POTASSIUM COMPOUNDS; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

EPITAXIAL LATERAL OVERGROWTH (ELO);

GALLIUM NITRIDE;

EID: 0037302840     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-577X(02)00988-6     Document Type: Article

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