메뉴 건너뛰기




Volumn , Issue , 2003, Pages 11-14

Research on III-V compound semiconductor based optoelectronic devices

Author keywords

Distributed feedback devices; Fiber lasers; III V semiconductor materials; Integrated optoelectronics; Laser feedback; Optical fiber communication; Optical modulation; Optoelectronic devices; Quantum well devices; Semiconductor lasers

Indexed keywords

DISTRIBUTED FEEDBACK LASERS; FEEDBACK; FIBER LASERS; HETEROJUNCTIONS; INTEGRATED OPTOELECTRONICS; LIGHT EMISSION; LIGHT MODULATION; MODULATORS; MOLECULAR BEAM EPITAXY; OPTICAL COMMUNICATION; OPTICAL FIBER COMMUNICATION; OPTICAL FIBERS; OPTOELECTRONIC DEVICES; QUANTUM WELL LASERS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR LASERS; SEMICONDUCTOR MATERIALS;

EID: 84945564617     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/COS.2003.1278153     Document Type: Conference Paper
Times cited : (2)

References (10)
  • 2
    • 0001642260 scopus 로고    scopus 로고
    • 2.5 Gb/s electroabsorption modulator integrated with partially gain-coupled distributed feedback laser fabricated using a very simple device structure
    • Y. Luo, G.-P. Wen, C.-Z. Sun, T.-N. Li, X.-M. Yang, Y.-S. Wu, R.-F. Wang, C.-L, Wang, T. Huang, and J.-Y. Jin, "2.5 Gb/s electroabsorption modulator integrated with partially gain-coupled distributed feedback laser fabricated using a very simple device structure," Jpn. J. Appl. Phys., vol. 38, pp. L524-L526, 1999.
    • (1999) Jpn. J. Appl. Phys. , vol.38 , pp. L524-L526
    • Luo, Y.1    Wen, G.-P.2    Sun, C.-Z.3    Li, T.-N.4    Yang, X.-M.5    Wu, Y.-S.6    Wang, R.-F.7    Wang, C.-L.8    Huang, T.9    Jin, J.-Y.10
  • 3
    • 0033460629 scopus 로고    scopus 로고
    • 1.5 mm InGaAsP/InP Strained MQW Gain-Coupled DFB Laser with an Improved Periodically Modulated Injection-Carrier Grating
    • Y. Luo, G.-P. Wen, Y.-N. Gan, K.-Q. Zhang, T. K. Sudoh, S. Sudo, Y. Nakano, K. Tada "1.5 mm InGaAsP/InP Strained MQW Gain-Coupled DFB Laser with an Improved Periodically Modulated Injection-Carrier Grating," J. Korea Phys. Society, vol. 34, Iss. S, pp. S101-S103, 1999.
    • (1999) J. Korea Phys. Society , vol.34 , Issue.S , pp. S101-S103
    • Luo, Y.1    Wen, G.-P.2    Gan, Y.-N.3    Zhang, K.-Q.4    Sudoh, T.K.5    Sudo, S.6    Nakano, Y.7    Tada, K.8
  • 4
    • 0029254357 scopus 로고
    • Analysis of distributed feedback semiconductor laser-electroabsorption modulator integrated light source, including gain-coupled structure
    • W. Si, Y. Luo, D. Li, K. Zhang, Y. Nakano, and K. Tada, "Analysis of distributed feedback semiconductor laser-electroabsorption modulator integrated light source, including gain-coupled structure," Jpn. J. Appl. Phys., vol. 34, pp. 1260-1264, 1995.
    • (1995) Jpn. J. Appl. Phys. , vol.34 , pp. 1260-1264
    • Si, W.1    Luo, Y.2    Li, D.3    Zhang, K.4    Nakano, Y.5    Tada, K.6
  • 5
    • 0034316094 scopus 로고    scopus 로고
    • Theoretical Analysis of Polarization Insensitive InGaAsP Multiple-Quantum-Wells Electroabsorption Modulators with Negative Chirp
    • C.-L. GUO, C.-Z. SUN, Z.-B. HAO, and Y. LUO, "Theoretical Analysis of Polarization Insensitive InGaAsP Multiple-Quantum-Wells Electroabsorption Modulators with Negative Chirp," Jpn. J. Appl. Phys., vol. 39, Part 1, No. 11, pp. 6166-6169, 2000.
    • (2000) Jpn. J. Appl. Phys. , vol.39 , Issue.11 , pp. 6166-6169
    • Guo, C.-L.1    Sun, C.-Z.2    Hao, Z.-B.3    Luo, Y.4
  • 6
    • 0035337736 scopus 로고    scopus 로고
    • Influence of wavelength detuning on device performance of electroabsorption modulator integrated distributed feedback lasers based on identical epitaxial layer approach
    • C. SUN, B. XIONG G. WEN, et al, "Influence of wavelength detuning on device performance of electroabsorption modulator integrated distributed feedback lasers based on identical epitaxial layer approach," IEICE T ELECTRON,Vol. E84C, No. 5, pp. 656-659, 2001
    • (2001) IEICE T Electron , vol.E84C , Issue.5 , pp. 656-659
    • Sun, C.1    Xiong, B.2    Wen, G.3
  • 7
    • 0035307438 scopus 로고    scopus 로고
    • 4 in III-V compound semiconductors with two group V elements grown by molecular beam epitaxy
    • 4 in III-V compound semiconductors with two group V elements grown by molecular beam epitaxy. Journal of Crystal Growth, vol. 224, no. 3-4, 2001, pp. 224-229.
    • (2001) Journal of Crystal Growth , vol.224 , Issue.3-4 , pp. 224-229
    • Hao, Z.-B.1    Ren, Z.-Y.2    Guo, W.-P.3    Luo, Y.4
  • 8
    • 0036131736 scopus 로고    scopus 로고
    • 1-y/InP quantum wells grown by solid source molecular beam epitaxy using As2 and As4
    • 1-y/InP quantum wells grown by solid source molecular beam epitaxy using As2 and As4. Journal of Crystal Growth, vol. 234, no, 2-3, 2002, pp. 364-368.
    • (2002) Journal of Crystal Growth , vol.234 , Issue.2-3 , pp. 364-368
    • Hao, Z.-B.1    Ren, Z.-Y.2    Xiong, B.3    Guo, W.-P.4    Luo, Y.5
  • 9
    • 0036478449 scopus 로고    scopus 로고
    • 1.55 mm InAsP / InGaAsP Strained Multiple-Quantum-Well Laser Diodes Grown by Solid-Source Molecular Beam Epitaxy
    • Z.-B. HAO, Z.-Y. REN, W. HE and Y. LUO, "1.55 mm InAsP / InGaAsP Strained Multiple-Quantum-Well Laser Diodes Grown by Solid-Source Molecular Beam Epitaxy," Jpn. J. Appl. Phys., vol. 41, (2002), pp. 754-757.
    • (2002) Jpn. J. Appl. Phys. , vol.41 , pp. 754-757
    • Hao, Z.-B.1    Ren, Z.-Y.2    He, W.3    Luo, Y.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.