Thickness-fringe contrast analysis of defects in GaN

Materials Research Society Symposium - Proceedings

Volumn 673, Issue , 2001, Pages

  Farrer, Jeffrey K ^a   Carter, C Barry ^a   Mao, Z ^a   McKerman, Stuart ^a  

^a University of Minnesota   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SUBSTRATES; SURFACES; TRANSMISSION ELECTRON MICROSCOPY;

BURGERS VECTOR; LATERAL EPITACTIC OVERGROWTH; SECONDARY ELECTRON IMAGING; THICKNESS-FRINGE CONTRAST ANALYSIS;

GALLIUM NITRIDE;

EID: 0035559019     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-673-p3.12     Document Type: Conference Paper

References (7)