Effects of reactor pressure on GaN-based light-emitting diodes grown on a-plane sapphire substrates

Journal of Crystal Growth

Volumn 267, Issue 3-4, 2004, Pages 395-399

  Li, D S ^a   Chen, H ^a   Yu, H B ^a   Jia, H Q ^a   Huang, Q ^a   Zhou, J M ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

A3. Metalorganic chemical vapor deposition; B1. Nitrides

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; ELECTROLUMINESCENCE; FIELD EFFECT TRANSISTORS; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; SAPPHIRE; SEMICONDUCTOR QUANTUM WELLS; X RAY DIFFRACTION;

EPILAYERS; LASER CAVITIES; LATERAL GROWTH; REACTOR PRESSURE;

GALLIUM NITRIDE;

EID: 2942522584     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.04.005     Document Type: Article

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