Epitaxial lateral overgrowth of gallium nitride on silicon substrate

Journal of Crystal Growth

Volumn 263, Issue 1-4, 2004, Pages 30-34

  Ju, Wentao ^a   Gulino, Daniel A ^a   Higgins, Ryan ^a  

^a US Institute of Navigation   (United States)

Author keywords

A1. Characterization; A1. Crystal structure; A1. X ray diffraction; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

CRYSTAL ORIENTATION; CRYSTAL STRUCTURE; DISLOCATIONS (CRYSTALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PHOTOLITHOGRAPHY; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SILICON; THERMAL CONDUCTIVITY OF SOLIDS; X RAY DIFFRACTION ANALYSIS;

EPITAXIAL LATERAL OVERGROWTH (ELO); LATTICE MISMATCH;

GALLIUM NITRIDE;

EID: 1242286499     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.11.107     Document Type: Article

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