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Journal of Crystal Growth

Volumn 248, Issue SUPPL., 2003, Pages 568-572

Structural properties of maskless epitaxial lateral overgrown MOCVD GaN layers on Si (1 1 1) substrates

(6) Haffouz, S a,b Grzegorczyk, A a Hageman, P R a Vennegues P c Van der Drift, E W J M d Larsen, P K a

a RADBOUD UNIVERSITY NIJMEGEN (Netherlands)

b EINDHOVEN UNIVERSITY OF TECHNOLOGY (Netherlands)

c CNRS (France)

d DELFT UNIVERSITY OF TECHNOLOGY (Netherlands)

Author keywords

A1. Low dislocation density; A3. Metalorganic vapor phase epitaxy; A3. Structured substrate; B1. Nitrides

Indexed keywords

DISLOCATIONS (CRYSTALS); DRY ETCHING; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUCLEATION; PHOTOLITHOGRAPHY; SILICON; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

DISLOCATION DENSITY;

EPITAXIAL GROWTH;

EID: 0037291873 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(02)01842-0 Document Type: Conference Paper

Times cited : (14)

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