-
1
-
-
0034230128
-
High-power and long-lifetime InGaN multi-quantum-well laser diodes grown on low-dislocation-density GaN substrates
-
S. Nagahama, N. Iwasa, M. Senoh, T. Matsushita, Y. Sugimoto, H. Kiyoku, T. Kozaki, M. Sano, H. Matsumura, H. Umemoto, K. Chocho and T. Mukai, "High-power and long-lifetime InGaN multi-quantum-well laser diodes grown on low-dislocation-density GaN substrates", Jpn. J. Appl. Phys. 39, pp. L647-L650, 2000.
-
(2000)
Jpn. J. Appl. Phys.
, vol.39
-
-
Nagahama, S.1
Iwasa, N.2
Senoh, M.3
Matsushita, T.4
Sugimoto, Y.5
Kiyoku, H.6
Kozaki, T.7
Sano, M.8
Matsumura, H.9
Umemoto, H.10
Chocho, K.11
Mukai, T.12
-
3
-
-
1942456882
-
Progress in growth and physics of nitride-based quantum dots
-
Y. Arakawa, "Progress in growth and physics of nitride-based quantum dots", Phys. Status Solidi (a) 188, pp. 37-46, 2001.
-
(2001)
Phys. Status Solidi (a)
, vol.188
, pp. 37-46
-
-
Arakawa, Y.1
-
4
-
-
0035943935
-
Ultraviolet picosecond optical pulse generation from a mode-locked InGaN laser diode
-
S. Gee and J. E. Bowers, "Ultraviolet picosecond optical pulse generation from a mode-locked InGaN laser diode", Appl. Phys. Lett. 79, pp. 1951-1952, 2001.
-
(2001)
Appl. Phys. Lett.
, vol.79
, pp. 1951-1952
-
-
Gee, S.1
Bowers, J.E.2
-
5
-
-
0032606622
-
High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors on laterally epitaxially overgrown GaN
-
G. Parish, S. Keller, P. Kozodoy, J. P. Ibbetson, H. Marchand, P. T. Fini, S. B. Fleischer, S. P. DenBaars, U. K. Mishra and E. J. Tarsa, "High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors on laterally epitaxially overgrown GaN", Appl. Phys. Lett. 75, pp. 247-249, 1999.
-
(1999)
Appl. Phys. Lett.
, vol.75
, pp. 247-249
-
-
Parish, G.1
Keller, S.2
Kozodoy, P.3
Ibbetson, J.P.4
Marchand, H.5
Fini, P.T.6
Fleischer, S.B.7
Denbaars, S.P.8
Mishra, U.K.9
Tarsa, E.J.10
-
6
-
-
0035278796
-
GaN avalanche photodiodes operating in linear-gain mode and Geiger mode
-
S. Verghese, K. A. McIntosh, R. J. Molnar, L. J. Mahoney, R. L. Aggarwal, M. W. Geis, K. M. Molvar, E. K. Duerr and I. Melngailis, "GaN avalanche photodiodes operating in linear-gain mode and Geiger mode", IEEE Trans. Electron Devices 48, pp. 502-511, 2001.
-
(2001)
IEEE Trans. Electron Devices
, vol.48
, pp. 502-511
-
-
Verghese, S.1
McIntosh, K.A.2
Molnar, R.J.3
Mahoney, L.J.4
Aggarwal, R.L.5
Geis, M.W.6
Molvar, K.M.7
Duerr, E.K.8
Melngailis, I.9
-
7
-
-
0347874296
-
III-nitrides: Growth, characterization and properties
-
S. C. Jain, M. Willander, J. Narayan and R. VanOverstraeten, "III-nitrides: growth, characterization and properties", J. Appl. Phys. 87, pp. 965-1006, 2000.
-
(2000)
J. Appl. Phys.
, vol.87
, pp. 965-1006
-
-
Jain, S.C.1
Willander, M.2
Narayan, J.3
Vanoverstraeten, R.4
-
8
-
-
0035688986
-
III-nitride semiconductor growth by MBE: Recent issues
-
H. Morkoç, "III-nitride semiconductor growth by MBE: recent issues", J. Mater. Sci. 12, pp. 677-695, 2001.
-
(2001)
J. Mater. Sci.
, vol.12
, pp. 677-695
-
-
Morkoç, H.1
-
10
-
-
0031150308
-
Growth of gallium nitride by hydride vapor-phase epitaxy
-
R. J. Molnar, W. Götz, L. T. Romano and N. M. Johnson, "Growth of gallium nitride by hydride vapor-phase epitaxy", J. Cryst. Growth 178, pp. 147-156, 1997.
-
(1997)
J. Cryst. Growth
, vol.178
, pp. 147-156
-
-
Molnar, R.J.1
Götz, W.2
Romano, L.T.3
Johnson, N.M.4
-
11
-
-
0001141036
-
Preparation of large freestanding GaN substrates by hydride vapor phase epitaxy using GaAs as a starting substrate
-
K. Motoki, T. Okahisa, N. Matsumoto, M. Matsushima, H. Kimura, H. Kasai, K. Takemoto, K. Uematsu, T. Hirano, M. Nakayama, S. Nakahata, M. Ueno, D. Hara, Y. Kumagai, A. Koukitu and H. Seki, "Preparation of large freestanding GaN substrates by hydride vapor phase epitaxy using GaAs as a starting substrate", Jpn. J. Appl. Phys. 40, pp. L140-L143, 2001.
-
(2001)
Jpn. J. Appl. Phys.
, vol.40
-
-
Motoki, K.1
Okahisa, T.2
Matsumoto, N.3
Matsushima, M.4
Kimura, H.5
Kasai, H.6
Takemoto, K.7
Uematsu, K.8
Hirano, T.9
Nakayama, M.10
Nakahata, S.11
Ueno, M.12
Hara, D.13
Kumagai, Y.14
Koukitu, A.15
Seki, H.16
-
12
-
-
0001634116
-
Evolution of deep centers in GaN grown by hydride vapor phase epitaxy
-
Z.-Q. Fang, D. C. Look, J. Jasinski, M. Benamara, Z. Liliental-Weber and R. J. Molnar, "Evolution of deep centers in GaN grown by hydride vapor phase epitaxy", Appl. Phys. Lett. 78, pp. 332-334, 2001.
-
(2001)
Appl. Phys. Lett.
, vol.78
, pp. 332-334
-
-
Fang, Z.-Q.1
Look, D.C.2
Jasinski, J.3
Benamara, M.4
Liliental-Weber, Z.5
Molnar, R.J.6
-
13
-
-
36449008979
-
Electron mobilities in gallium, indium, and aluminum nitrides
-
V. W. L. Chin, T. L. Tansley and T. Osotchan, "Electron mobilities in gallium, indium, and aluminum nitrides", J. Appl. Phys. 75, pp. 7365-7372, 1994.
-
(1994)
J. Appl. Phys.
, vol.75
, pp. 7365-7372
-
-
Chin, V.W.L.1
Tansley, T.L.2
Osotchan, T.3
-
14
-
-
0038974576
-
Effect of growth stoichiometry on the electrical activity of screw dislocations in GaN films grown by molecular-beam epitaxy
-
J. W. P. Hsu, M. J. Manfra, S. N. G. Chu, C. H. Chen, L. N. Pfeiffer and R. J. Molnar, "Effect of growth stoichiometry on the electrical activity of screw dislocations in GaN films grown by molecular-beam epitaxy", Appl. Phys. Lett. 78, pp. 3980-3982, 2001.
-
(2001)
Appl. Phys. Lett.
, vol.78
, pp. 3980-3982
-
-
Hsu, J.W.P.1
Manfra, M.J.2
Chu, S.N.G.3
Chen, C.H.4
Pfeiffer, L.N.5
Molnar, R.J.6
-
15
-
-
0001357668
-
High-mobility AlGaN/GaN heterostructures grown by molecular-beam epitaxy on GaN templates prepared by hydride vapor phase epitaxy
-
M. J. Manfra, L. N. Pfeiffer, K. W. West, H. L. Stormer, K. W. Baldwin, J. W. P. Hsu, D. V. Lang and R. J. Molnar, "High-mobility AlGaN/GaN heterostructures grown by molecular-beam epitaxy on GaN templates prepared by hydride vapor phase epitaxy", Appl. Phys. Lett. 77, pp. 2888-2890, 2000.
-
(2000)
Appl. Phys. Lett.
, vol.77
, pp. 2888-2890
-
-
Manfra, M.J.1
Pfeiffer, L.N.2
West, K.W.3
Stormer, H.L.4
Baldwin, K.W.5
Hsu, J.W.P.6
Lang, D.V.7
Molnar, R.J.8
-
16
-
-
0029405049
-
Stimulated emission by current injection from an AlGaN/GaN/GaInN quantum well device
-
I. Akasaki, H. Amano, S. Sota, H. Sakai, T. Tanaka and M. Koike, "Stimulated emission by current injection from an AlGaN/GaN/GaInN quantum well device", Jpn. J. Appl. Phys. 34, pp. L1517-L1519, 1995.
-
(1995)
Jpn. J. Appl. Phys.
, vol.34
-
-
Akasaki, I.1
Amano, H.2
Sota, S.3
Sakai, H.4
Tanaka, T.5
Koike, M.6
-
17
-
-
0029779805
-
InGaN-based multi-quantum-well-structure laser diodes
-
S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku and Y. Sugimoto, "InGaN-based multi-quantum-well-structure laser diodes," Jpn. J. Appl. Phys. 35, pp. L74-L76, 1996.
-
(1996)
Jpn. J. Appl. Phys.
, vol.35
-
-
Nakamura, S.1
Senoh, M.2
Nagahama, S.3
Iwasa, N.4
Yamada, T.5
Matsushita, T.6
Kiyoku, H.7
Sugimoto, Y.8
-
18
-
-
0035415793
-
Ultraviolet GaN single quantum well laser diodes
-
S. Nagahama, T. Yanamoto, M. Sano and T. Mukai, "Ultraviolet GaN single quantum well laser diodes", Jpn. J. Appl. Phys. 40, pp. L785-L787, 2001.
-
(2001)
Jpn. J. Appl. Phys.
, vol.40
-
-
Nagahama, S.1
Yanamoto, T.2
Sano, M.3
Mukai, T.4
-
19
-
-
0035328412
-
Wavelength dependence of InGaN laser diode characteristics
-
S. Nagahama, T. Yanamoto, M. Sano and T. Mukai, "Wavelength dependence of InGaN laser diode characteristics", Jpn. J. Appl. Phys. 40, pp. 3075-3081, 2001.
-
(2001)
Jpn. J. Appl. Phys.
, vol.40
, pp. 3075-3081
-
-
Nagahama, S.1
Yanamoto, T.2
Sano, M.3
Mukai, T.4
-
20
-
-
0035943897
-
Characteristics of InGaN laser diodes in the pure blue region
-
S. Nagahama, T. Yamamoto, M. Sano and T. Mukai, "Characteristics of InGaN laser diodes in the pure blue region", Appl. Phys. Lett. 79, pp. 1948-1950, 2001.
-
(2001)
Appl. Phys. Lett.
, vol.79
, pp. 1948-1950
-
-
Nagahama, S.1
Yamamoto, T.2
Sano, M.3
Mukai, T.4
-
21
-
-
79956040037
-
1-x-yN with In-segregation effect
-
1-x-yN with In-segregation effect", Appl. Phys. Lett. 80, pp. 207-209, 2002.
-
(2002)
Appl. Phys. Lett.
, vol.80
, pp. 207-209
-
-
Hirayama, H.1
Kinoshita, A.2
Yamabi, T.3
Enomoto, Y.4
Hirata, A.5
Araki, T.6
Nanishi, Y.7
Aoyagi, Y.8
-
22
-
-
0000869695
-
Resonant-cavity InGaN quantum-well blue light-emitting diodes
-
Y.-K. Song, M. Diagne, H. Zhou, A. V. Nurmikko, R. P. Schneider Jr. and T. Takeuchi, "Resonant-cavity InGaN quantum-well blue light-emitting diodes", Appl. Phys. Lett. 77, pp. 1744-1746, 2000.
-
(2000)
Appl. Phys. Lett.
, vol.77
, pp. 1744-1746
-
-
Song, Y.-K.1
Diagne, M.2
Zhou, H.3
Nurmikko, A.V.4
Schneider Jr., R.P.5
Takeuchi, T.6
-
23
-
-
0009827979
-
1-xN p-i-n photodiodes
-
1-xN p-i-n photodiodes", Phys. Status Solidi (a) 188, pp. 283-288, 2001.
-
(2001)
Phys. Status Solidi (a)
, vol.188
, pp. 283-288
-
-
Campbell, J.C.1
Collins, C.J.2
Wong, M.M.3
Chowdhury, U.4
Beck, A.L.5
Dupuis, R.D.6
-
24
-
-
0035250755
-
+ diodes
-
+ diodes", Solid State Commun. 117, pp. 549-553,2001.
-
(2001)
Solid State Commun.
, vol.117
, pp. 549-553
-
-
Aggarwal, R.L.1
Melngailis, I.2
Verghese, S.3
Molnar, R.J.4
Geis, M.W.5
Mahoney, L.J.6
-
25
-
-
0000388575
-
Theory of hole initiated impact ionization in bulk zincblende and wurtzite GaN
-
I. H. Oguzman, E. Bellotti, K. F. Brennan, J. Kolnik, R. Wang and P. P. Ruden, "Theory of hole initiated impact ionization in bulk zincblende and wurtzite GaN", J. Appl. Phys. 81, pp. 7827-7834, 1997.
-
(1997)
J. Appl. Phys.
, vol.81
, pp. 7827-7834
-
-
Oguzman, I.H.1
Bellotti, E.2
Brennan, K.F.3
Kolnik, J.4
Wang, R.5
Ruden, P.P.6
-
27
-
-
79956040432
-
Effect of thickness variation in high- efficiency InGaN/GaN light-emitting diodes
-
J. Narayan, H. Wang, J.Ye, S.-J. Hon, K.Fox, J.C.Chen, H.K.Choi, and J.C.C. Fan, "Effect of thickness variation in high- efficiency InGaN/GaN light-emitting diodes", Appl. Phys. Lett. 81, pp 841-843, 2002.
-
(2002)
Appl. Phys. Lett.
, vol.81
, pp. 841-843
-
-
Narayan, J.1
Wang, H.2
Ye, J.3
Hon, S.-J.4
Fox, K.5
Chen, J.C.6
Choi, H.K.7
Fan, J.C.C.8
|