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Volumn 5123, Issue , 2002, Pages 231-237

Progress in GaN-based materials and optical devices

Author keywords

Detectors; GaN; Lasers; Semiconductors; Ultraviolet

Indexed keywords

AVALANCHE DIODES; ENERGY GAP; FABRICATION; OPTICAL DEVICES; PHOTODIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS; ULTRAVIOLET DEVICES;

EID: 0345375366     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.517027     Document Type: Conference Paper
Times cited : (2)

References (27)
  • 3
    • 1942456882 scopus 로고    scopus 로고
    • Progress in growth and physics of nitride-based quantum dots
    • Y. Arakawa, "Progress in growth and physics of nitride-based quantum dots", Phys. Status Solidi (a) 188, pp. 37-46, 2001.
    • (2001) Phys. Status Solidi (a) , vol.188 , pp. 37-46
    • Arakawa, Y.1
  • 4
    • 0035943935 scopus 로고    scopus 로고
    • Ultraviolet picosecond optical pulse generation from a mode-locked InGaN laser diode
    • S. Gee and J. E. Bowers, "Ultraviolet picosecond optical pulse generation from a mode-locked InGaN laser diode", Appl. Phys. Lett. 79, pp. 1951-1952, 2001.
    • (2001) Appl. Phys. Lett. , vol.79 , pp. 1951-1952
    • Gee, S.1    Bowers, J.E.2
  • 8
    • 0035688986 scopus 로고    scopus 로고
    • III-nitride semiconductor growth by MBE: Recent issues
    • H. Morkoç, "III-nitride semiconductor growth by MBE: recent issues", J. Mater. Sci. 12, pp. 677-695, 2001.
    • (2001) J. Mater. Sci. , vol.12 , pp. 677-695
    • Morkoç, H.1
  • 10
    • 0031150308 scopus 로고    scopus 로고
    • Growth of gallium nitride by hydride vapor-phase epitaxy
    • R. J. Molnar, W. Götz, L. T. Romano and N. M. Johnson, "Growth of gallium nitride by hydride vapor-phase epitaxy", J. Cryst. Growth 178, pp. 147-156, 1997.
    • (1997) J. Cryst. Growth , vol.178 , pp. 147-156
    • Molnar, R.J.1    Götz, W.2    Romano, L.T.3    Johnson, N.M.4
  • 13
    • 36449008979 scopus 로고
    • Electron mobilities in gallium, indium, and aluminum nitrides
    • V. W. L. Chin, T. L. Tansley and T. Osotchan, "Electron mobilities in gallium, indium, and aluminum nitrides", J. Appl. Phys. 75, pp. 7365-7372, 1994.
    • (1994) J. Appl. Phys. , vol.75 , pp. 7365-7372
    • Chin, V.W.L.1    Tansley, T.L.2    Osotchan, T.3
  • 14
    • 0038974576 scopus 로고    scopus 로고
    • Effect of growth stoichiometry on the electrical activity of screw dislocations in GaN films grown by molecular-beam epitaxy
    • J. W. P. Hsu, M. J. Manfra, S. N. G. Chu, C. H. Chen, L. N. Pfeiffer and R. J. Molnar, "Effect of growth stoichiometry on the electrical activity of screw dislocations in GaN films grown by molecular-beam epitaxy", Appl. Phys. Lett. 78, pp. 3980-3982, 2001.
    • (2001) Appl. Phys. Lett. , vol.78 , pp. 3980-3982
    • Hsu, J.W.P.1    Manfra, M.J.2    Chu, S.N.G.3    Chen, C.H.4    Pfeiffer, L.N.5    Molnar, R.J.6
  • 15
    • 0001357668 scopus 로고    scopus 로고
    • High-mobility AlGaN/GaN heterostructures grown by molecular-beam epitaxy on GaN templates prepared by hydride vapor phase epitaxy
    • M. J. Manfra, L. N. Pfeiffer, K. W. West, H. L. Stormer, K. W. Baldwin, J. W. P. Hsu, D. V. Lang and R. J. Molnar, "High-mobility AlGaN/GaN heterostructures grown by molecular-beam epitaxy on GaN templates prepared by hydride vapor phase epitaxy", Appl. Phys. Lett. 77, pp. 2888-2890, 2000.
    • (2000) Appl. Phys. Lett. , vol.77 , pp. 2888-2890
    • Manfra, M.J.1    Pfeiffer, L.N.2    West, K.W.3    Stormer, H.L.4    Baldwin, K.W.5    Hsu, J.W.P.6    Lang, D.V.7    Molnar, R.J.8
  • 16
    • 0029405049 scopus 로고
    • Stimulated emission by current injection from an AlGaN/GaN/GaInN quantum well device
    • I. Akasaki, H. Amano, S. Sota, H. Sakai, T. Tanaka and M. Koike, "Stimulated emission by current injection from an AlGaN/GaN/GaInN quantum well device", Jpn. J. Appl. Phys. 34, pp. L1517-L1519, 1995.
    • (1995) Jpn. J. Appl. Phys. , vol.34
    • Akasaki, I.1    Amano, H.2    Sota, S.3    Sakai, H.4    Tanaka, T.5    Koike, M.6
  • 19
    • 0035328412 scopus 로고    scopus 로고
    • Wavelength dependence of InGaN laser diode characteristics
    • S. Nagahama, T. Yanamoto, M. Sano and T. Mukai, "Wavelength dependence of InGaN laser diode characteristics", Jpn. J. Appl. Phys. 40, pp. 3075-3081, 2001.
    • (2001) Jpn. J. Appl. Phys. , vol.40 , pp. 3075-3081
    • Nagahama, S.1    Yanamoto, T.2    Sano, M.3    Mukai, T.4
  • 20
    • 0035943897 scopus 로고    scopus 로고
    • Characteristics of InGaN laser diodes in the pure blue region
    • S. Nagahama, T. Yamamoto, M. Sano and T. Mukai, "Characteristics of InGaN laser diodes in the pure blue region", Appl. Phys. Lett. 79, pp. 1948-1950, 2001.
    • (2001) Appl. Phys. Lett. , vol.79 , pp. 1948-1950
    • Nagahama, S.1    Yamamoto, T.2    Sano, M.3    Mukai, T.4
  • 25
    • 0000388575 scopus 로고    scopus 로고
    • Theory of hole initiated impact ionization in bulk zincblende and wurtzite GaN
    • I. H. Oguzman, E. Bellotti, K. F. Brennan, J. Kolnik, R. Wang and P. P. Ruden, "Theory of hole initiated impact ionization in bulk zincblende and wurtzite GaN", J. Appl. Phys. 81, pp. 7827-7834, 1997.
    • (1997) J. Appl. Phys. , vol.81 , pp. 7827-7834
    • Oguzman, I.H.1    Bellotti, E.2    Brennan, K.F.3    Kolnik, J.4    Wang, R.5    Ruden, P.P.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.