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Journal of Applied Physics

Volumn 94, Issue 10, 2003, Pages 6499-6507

Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks

(8) Bethoux, J M a Vennegues P a Natali, F a Feltin, E a Tottereau, O a Nataf, G a De Mierry, P a Semond, F a

a CNRS (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRACKS; DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; RELAXATION PROCESSES; SCANNING ELECTRON MICROSCOPY; SUBSTRATES;

DISLOCATION DENSITY; PLASTIC RELAXATION;

FILM GROWTH;

EID: 0344084243 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1622993 Document Type: Article

Times cited : (99)

References (29)

1
- 0034831582
- S. Kamiyama, M. Iwaya, N. Hayashi, T. Takeuchi, H. Amano, I. Akasaki, S. Watanabe, Y. Kaneko, and N. Yamada, J. Cryst. Growth 223, 83 (2001).
- (2001) J. Cryst. Growth , vol.223 , pp. 83
- Kamiyama, S.¹ Iwaya, M.² Hayashi, N.³ Takeuchi, T.⁴ Amano, H.⁵ Akasaki, I.⁶ Watanabe, S.⁷ Kaneko, Y.⁸ Yamada, N.⁹

2
- 0025698552
- K. Itoh, K. Hiramatsu, H. Amano, and I. Akasaki, J. Cryst. Growth 104, 533 (1990).
- (1990) J. Cryst. Growth , vol.104 , pp. 533
- Itoh, K.¹ Hiramatsu, K.² Amano, H.³ Akasaki, I.⁴

3
- 0347561731
- S. J. Hearne, J. Han, S. R. Lee, J. A. Floro, D. M. Follstaedt, E. Chason, and I. S. T. Tsong, Appl. Phys. Lett. 76, 1534 (2000).
- (2000) Appl. Phys. Lett. , vol.76 , pp. 1534
- Hearne, S.J.¹ Han, J.² Lee, S.R.³ Floro, J.A.⁴ Follstaedt, D.M.⁵ Chason, E.⁶ Tsong, I.S.T.⁷

4
- 0001015212
- S. Einfeldt, V. Kirchner, H. Heinke, M. DieBelberg, S. Figge, K. Vogeler, and D. Hommel, J. Appl. Phys. 88, 7029 (2000).
- (2000) J. Appl. Phys. , vol.88 , pp. 7029
- Einfeldt, S.¹ Kirchner, V.² Heinke, H.³ Diebelberg, M.⁴ Figge, S.⁵ Vogeler, K.⁶ Hommel, D.⁷

5
- 0346955939
- J. W. Matthews and A. E. Blakeslee, J. Cryst. Growth 27, 118 (1974).
- (1974) J. Cryst. Growth , vol.27 , pp. 118
- Matthews, J.W.¹ Blakeslee, A.E.²

6
- 0002340796
- B. Jahnen, M. Albrecht, W. Dorsch, S. Christiansen, H. P. Strunck, D. Hanser, and R. F. Davis, MRS Internet J. Nitride Semicond. Res. 3, 39 (1998).
- (1998) MRS Internet J. Nitride Semicond. Res. , vol.3 , pp. 39
- Jahnen, B.¹ Albrecht, M.² Dorsch, W.³ Christiansen, S.⁴ Strunck, H.P.⁵ Hanser, D.⁶ Davis, R.F.⁷

7
- 0001673268
- D. Chidambarrao, G. R. Srinivasan, B. Cunningham, and C. S. Murthy, Appl. Phys. Lett. 57, 1001 (1990).
- (1990) Appl. Phys. Lett. , vol.57 , pp. 1001
- Chidambarrao, D.¹ Srinivasan, G.R.² Cunningham, B.³ Murthy, C.S.⁴

8
- 0001792520
- J. Han, K. E. Waldrip, S. R. Lee, J. J. Figiel, S. J. Hearne, G. A. Petersen, and S. M. Myers, Appl. Phys. Lett. 78, 67 (2001).
- (2001) Appl. Phys. Lett. , vol.78 , pp. 67
- Han, J.¹ Waldrip, K.E.² Lee, S.R.³ Figiel, J.J.⁴ Hearne, S.J.⁵ Petersen, G.A.⁶ Myers, S.M.⁷

9
- 0036131670
- I. H. Lee, T. G. Kim, and Y. Park, J. Cryst. Growth 234, 305 (2002).
- (2002) J. Cryst. Growth , vol.234 , pp. 305
- Lee, I.H.¹ Kim, T.G.² Park, Y.³

10
- 0037164771
- C. Q. Chen, J. P. Zhang, M. E. Gaevski, H. M. Wang, W. H. Sun, R. S. Q. Fareed, J. W. Yang, and M. AsifKhan, Appl. Phys. Lett. 81, 4961 (2002).
- (2002) Appl. Phys. Lett. , vol.81 , pp. 4961
- Chen, C.Q.¹ Zhang, J.P.² Gaevski, M.E.³ Wang, H.M.⁴ Sun, W.H.⁵ Fareed, R.S.Q.⁶ Yang, J.W.⁷ Asifkhan, M.⁸

11
- 0033326386
- T. Kashima, R. Nakamura, M. Iwaya, H. Katoh, S. Yamaguchi, H. Amano, and I. Akasaki, Jpn. J. Appl. Phys., Part 2 38, L1515 (1999).
- (1999) Jpn. J. Appl. Phys., Part 2 , vol.38
- Kashima, T.¹ Nakamura, R.² Iwaya, M.³ Katoh, H.⁴ Yamaguchi, S.⁵ Amano, H.⁶ Akasaki, I.⁷

12
- 0038269509
- S. J. Rosner, E. C. Carr, M. J. Ludowise, G. Girolami, and H. I. Erikson, Appl. Phys. Lett. 70, 420 (1997).
- (1997) Appl. Phys. Lett. , vol.70 , pp. 420
- Rosner, S.J.¹ Carr, E.C.² Ludowise, M.J.³ Girolami, G.⁴ Erikson, H.I.⁵

13
- 18244391420
- edited by P. Ruterana, M. Albrecht, and J. Neugebauer (Wiley-WCH, Weinheim)
- P. Gibart, B. Beaumont, and P. Vennéguès, in Nitride Semiconductor Handbook on Material and Devices, edited by P. Ruterana, M. Albrecht, and J. Neugebauer (Wiley-WCH, Weinheim, 2003).
- (2003) Nitride Semiconductor Handbook on Material and Devices
- Gibart, P.¹ Beaumont, B.² Vennéguès, P.³

14
- 0000458923
- S. Haffouz, H. Lahreche, P. Vennéguès, P. De Mierry, B. Beaumont, F. Omnès, and P. Gibart, Appl. Phys. Lett. 73, 1278 (1998).
- (1998) Appl. Phys. Lett. , vol.73 , pp. 1278
- Haffouz, S.¹ Lahreche, H.² Vennéguès, P.³ De Mierry, P.⁴ Beaumont, B.⁵ Omnès, F.⁶ Gibart, P.⁷

15
- 1842686061
- F. Semond, Y. Cordier, N. Grandjean, F. Natali, B. Damilano, S. Vézian, and J. Massies, Phys. Status Solidi A 188, 501 (2001).
- (2001) Phys. Status Solidi A , vol.188 , pp. 501
- Semond, F.¹ Cordier, Y.² Grandjean, N.³ Natali, F.⁴ Damilano, B.⁵ Vézian, S.⁶ Massies, J.⁷

16
- 79956056570
- H. P. D. Schenk, P. De Mierry, P. Vennéguès, O. Tottereau, M. Laügt, E. Feltin, M. Vaille, B. Beaumont, P. Gibart, S. Fernandez, and F. Calle, Appl. Phys. Lett. 80, 174 (2002).
- (2002) Appl. Phys. Lett. , vol.80 , pp. 174
- Schenk, H.P.D.¹ De Mierry, P.² Vennéguès, P.³ Tottereau, O.⁴ Laügt, M.⁵ Feltin, E.⁶ Vaille, M.⁷ Beaumont, B.⁸ Gibart, P.⁹ Fernandez, S.¹⁰ Calle, F.¹¹

17
- 0000844988
- J. E. Northrup and J. Neugebauer, Phys. Rev. B 53, R10 477 (1996).
- (1996) Phys. Rev. B , vol.53
- Northrup, J.E.¹ Neugebauer, J.²

18
- 0001206935
- B. Heying, E. J. Tarsa, C. R. Elsass, P. Fini, S. P. DenBaars, and J. S. Speck, J. Appl. Phys. 85, 6470 (1999).
- (1999) J. Appl. Phys. , vol.85 , pp. 6470
- Heying, B.¹ Tarsa, E.J.² Elsass, C.R.³ Fini, P.⁴ Denbaars, S.P.⁵ Speck, J.S.⁶

19
- 0035272790
- S. Terao, M. Iwaya, R. Nakamura, S. Kamiyama, H. Amano, and I. Akasaki, Jpn. J. Appl. Phys., Part 2 40, L195 (2001).
- (2001) Jpn. J. Appl. Phys., Part 2 , vol.40
- Terao, S.¹ Iwaya, M.² Nakamura, R.³ Kamiyama, S.⁴ Amano, H.⁵ Akasaki, I.⁶

20
- 0000431379
- E. V. Etzkorn and D. R. Clarke, J. Appl. Phys. 89, 1025 (2001).
- (2001) J. Appl. Phys. , vol.89 , pp. 1025
- Etzkorn, E.V.¹ Clarke, D.R.²

21
- 0344166944
- S. J. Chua, M. Hao, J. Zhang, and E. K. Sia, Phys. Status Solidi A 188, 421 (2001).
- (2001) Phys. Status Solidi A , vol.188 , pp. 421
- Chua, S.J.¹ Hao, M.² Zhang, J.³ Sia, E.K.⁴

22
- 0001792332
- J. W. Hutchinson and Z. Suo, Adv. Appl. Mech. 29, 62 (1992).
- (1992) Adv. Appl. Mech. , vol.29 , pp. 62
- Hutchinson, J.W.¹ Suo, Z.²

23
- 34547827881
- edited by G. Roosen (Hermes Science, Paris)
- M. Leroux, in Matériaux Semi-Conducteurs III-V, II-VI et Nitrures pour l'Optoélectronique, edited by G. Roosen (Hermes Science, Paris, 2003).
- (2003) Matériaux Semi-Conducteurs III-V, II-VI et Nitrures Pour L'Optoélectronique
- Leroux, M.¹

24
- 0001483801
- J. E. Northrup, R. Di-Felice, and J. Neugebauer, Phys. Rev. B 55, 13 878 (1997).
- (1997) Phys. Rev. B , vol.55 , pp. 13878
- Northrup, J.E.¹ Di-Felice, R.² Neugebauer, J.³

25
- 0001395590
- G. Steude, B. K. Meyer, A. Göldner, A. Hoffman, A. Kaschner, F. Bechstedt, H. Amano, and I. Akasaki, Jpn. J. Appl. Phys., Part 2 38, L498 (1999).
- (1999) Jpn. J. Appl. Phys., Part 2 , vol.38
- Steude, G.¹ Meyer, B.K.² Göldner, A.³ Hoffman, A.⁴ Kaschner, A.⁵ Bechstedt, F.⁶ Amano, H.⁷ Akasaki, I.⁸

26
- 0037040754
- T.-Y. Zhang and M. H. Zhao, Eng. Fract. Mech. 69, 589 (2002).
- (2002) Eng. Fract. Mech. , vol.69 , pp. 589
- Zhang, T.-Y.¹ Zhao, M.H.²

27
- 0031553453
- S. C. Jain, H. E. Maes, and K. Pinardi, Thin Solid Films 292, 218 (1997).
- (1997) Thin Solid Films , vol.292 , pp. 218
- Jain, S.C.¹ Maes, H.E.² Pinardi, K.³

28
- 0004291219
- Butterworth and Heinemann, Oxford
- D. Hull and D. J. Bacon, Introduction to Dislocations, 4th ed. (Butterworth and Heinemann, Oxford, 2001).
- (2001) Introduction to Dislocations, 4th Ed.
- Hull, D.¹ Bacon, D.J.²

29
- 0003531591
- Wiley, New York
- J. P. Hirth and J. Lothe, Theory of Dislocations, 2nd ed. (Wiley, New York, 1930).
- (1930) Theory of Dislocations, 2nd Ed.
- Hirth, J.P.¹ Lothe, J.²

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