H3PO4 addition to slurry for Cu and TaN CMP

Electronics Letters

Volumn 39, Issue 9, 2003, Pages 718-719

  Kim, Sang Yong ^a   Kim, Nam Hoon ^b   Lim, Jong Heun ^c   Chang, Eui Goo ^b  

^a DongbuAnam Semiconductor Inc   (South Korea)

^b Chung Ang University   (South Korea)

^c Dongjin Semichem Co Ltd   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ABRASIVES; HYDROGEN PEROXIDE; INTEGRATED CIRCUITS; PHOSPHORIC ACID; SLURRIES; STABILIZERS (AGENTS); TANTALUM COMPOUNDS;

DISPERSION ABILITY;

METALLIZING;

EID: 0038734442     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20030491     Document Type: Article

References (8)

1. JINDAL, A., HEGDE, S., and BABU, S.V.: 'Evaluation of alumina/silica mixed abrasive slurries for chemical mechanical polishing of copper and tantalum'. 8th VMIC Conf., Santa Clara, CA, USA, 2001
2. CHOU, H., FEENEY, P., HAWKINS, J.D., MOEGGENBORG, K., BENNETT, K., and POWELL, K.: 'Development of next generation barrier CMP process for copper damascene'. 6th CMP-MIC Conf., Santa Clara, CA, USA, 2001
3. HONG, Y.K., EOM, D.H., and PARK, J.G.: 'The effect of additives in Cu CMP slurry on Cu polishing'. 200th Mtg of Electrochemical Society, San Fransisco, CA, USA, 2001
4. LEE, B.C., WANG, B., DUQUETTE, D.J., and GUTMANN, R.J.: 'Fundamental mechanism in metal CMP using model slurries'. 5th CMP-MIC Conf., Santa Clara, CA, USA, 2000
5. RAGHAVEN, S., and HUANG, W.: 'Electrochemical behavior of copper and tantalum in silica slurries containing hydroxylamine'. 6th VMIC Conf., Santa Clara, CA, USA, 1999
6. LI, S.H., and MILLER, R.O.: 'Chemical polishing in silicon processing', Semicond. Semimet., 2000, 63
7. MURARKA, S.P., VERNER, I.V., and GUTMANN, R.J.: 'Copper - Fundamental mechanisms for microelectronic applications' (John Wiley & Sons, Inc., 2000)
8. STEIGERWALD, J.M., MURARKA, S.P., and GUTMANN, R.J.: 'Chemical mechanical planarization of microelectronic materials' (John Wiley & Sons, Inc., 1997)