Planarization of copper thin films by electropolishing in phosphoric acid for ULSI applications

Journal of the Electrochemical Society

Volumn 150, Issue 1, 2003, Pages

  Padhi, D ^a   Yahalom, J ^b   Gandikota, S ^a   Dixit, G ^a  

^a APPLIED MATERIALS INC   (United States)

^b TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; BOUNDARY LAYERS; CURRENT DENSITY; DIFFUSION; ELECTROLYTES; ELECTROLYTIC POLISHING; HYDRODYNAMICS; INTERFACES (MATERIALS); PHOSPHORIC ACID; THIN FILMS; ULSI CIRCUITS;

ANODIC TRANSIENT; COPPER THIN FILMS; GALVANOSTATIC CONDITIONS; LOCAL TOPOGRAPHY; PLANARIZATION; ULTRALARGE SCALE INTEGRATION METALLIZATION;

COPPER;

EID: 0037258161     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1523415     Document Type: Article

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