Electrical and Physical Characterization of Zirconium-Doped Tantalum Oxide Thin Films

Journal of the Electrochemical Society

Volumn 151, Issue 3, 2004, Pages

  Tewg, Jun Yen ^a   Kuo, Yue ^a   Lu, Jiang ^a   Schueler, Bruno W ^b  

^a Texas AandM University   (United States)

^b Physical Electronics   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BINDING ENERGY; CHARGE TRANSFER; COMPOSITION; DOPING (ADDITIVES); HYSTERESIS; PARAMETER ESTIMATION; PERMITTIVITY; SCHOTTKY BARRIER DIODES; SPUTTERING; THIN FILMS; ZIRCONIUM;

ACCUMULATION REGIME; CURRENT CONDUCTION MECHANISM;

TANTALUM COMPOUNDS;

EID: 1842425491     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1644607     Document Type: Article

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